ZnO nanowire and mesowire for logic inverter fabrication

Young Tack Lee; Seongil Im; Ryong Ha; Heon Jin Choi

doi:10.1063/1.3492837

ZnO nanowire and mesowire for logic inverter fabrication

Young Tack Lee, Seongil Im, Ryong Ha, Heon Jin Choi

Yonsei University

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We report on a ZnO-based logic inverter utilizing two field effect transistors (FETs), whose respective channel has different wire-diameters under a top-gate dielectric of poly-4-vinylphenol. One FET with nanowire (160 nm) channel displayed an abrupt drain current (I_D) increase and fast I_D saturation near its positive threshold voltage (V_th) while the other FET with mesowire (770 nm) showed a thin-film transistor-like behavior and a negative V_th. When the nanowire and mesowire FETs were, respectively, used as a driver and a load, our inverter demonstrated an excellent voltage gain as high as 25 under a supply voltage of 20 V.

Original language	English
Article number	123506
Journal	Applied Physics Letters
Volume	97
Issue number	12
DOIs	https://doi.org/10.1063/1.3492837
State	Published - 20 Sep 2010
Externally published	Yes

Bibliographical note

Funding Information:
Authors acknowledge the financial support from NRF (NRL program: Grant No. 2009-8-0403), KOSEF through the National Core Research Center for Nanomedical Technology (Grant No. R15-2004-024-00000-0), Brain Korea 21 Program, and Hi Seoul Science/Humanities Fellowship.

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abstract = "We report on a ZnO-based logic inverter utilizing two field effect transistors (FETs), whose respective channel has different wire-diameters under a top-gate dielectric of poly-4-vinylphenol. One FET with nanowire (160 nm) channel displayed an abrupt drain current (ID) increase and fast ID saturation near its positive threshold voltage (Vth) while the other FET with mesowire (770 nm) showed a thin-film transistor-like behavior and a negative Vth. When the nanowire and mesowire FETs were, respectively, used as a driver and a load, our inverter demonstrated an excellent voltage gain as high as 25 under a supply voltage of 20 V.",

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AU - Ha, Ryong

AU - Choi, Heon Jin

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ZnO nanowire and mesowire for logic inverter fabrication

Abstract

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