Xe+ ion irradiation to boost NO2 sensing characteristics of SnO2 nanowires

Wansik Oum; Ali Mirzaei; Ka Yoon Shin; Eun Bi Kim; Hyeong Min Kim; Sang Sub Kim; Hyoun Woo Kim

doi:10.1016/j.snb.2023.134206

Xe⁺ ion irradiation to boost NO₂ sensing characteristics of SnO₂ nanowires

Wansik Oum
, Ali Mirzaei
, Ka Yoon Shin
, Eun Bi Kim
, Hyeong Min Kim
, Sang Sub Kim
, Hyoun Woo Kim

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

In this paper, pristine and Xe⁺ ion-irradiated sensors are studied for NO₂ sensing purposes. SnO₂ nanowires (NWs) were synthesized via a simple growth method and irradiated with Xe⁺ ions at different doses (10¹⁴, 10¹⁵, and 10¹⁶ ions/cm²). The gas sensors were fabricated after different characterizations of morphology, phase, and chemical composition. The NO₂ sensing experiments revealed that there was an optimal dose (10¹⁴ ions/cm²) for which the highest response to NO₂ was achieved. At 200 °C, the optimal sensor had a high response of 27.32–10 ppm of NO₂. Furthermore, the sensor demonstrated high selectivity to NO₂ gas. The boosted gas response of the optimized sensor was due to the formation of n-n homojunctions between the SnO₂-SnO₂ NWs and the irradiation-induced formation of defects. This study confirms the usefulness of irradiation in boosting the sensing features of metal oxides.

Original language	English
Article number	134206
Journal	Sensors and Actuators B: Chemical
Volume	393
DOIs	https://doi.org/10.1016/j.snb.2023.134206
State	Published - 15 Oct 2023

Bibliographical note

Publisher Copyright:
© 2023 Elsevier B.V.

Keywords

NO gas
Nanowires
Sensing mechanism
SnO
Xe irradiation

Access to Document

10.1016/j.snb.2023.134206

Cite this

@article{5567ee32d4a44fbeb446dc80ee105b96,

title = "Xe+ ion irradiation to boost NO2 sensing characteristics of SnO2 nanowires",

abstract = "In this paper, pristine and Xe+ ion-irradiated sensors are studied for NO2 sensing purposes. SnO2 nanowires (NWs) were synthesized via a simple growth method and irradiated with Xe+ ions at different doses (1014, 1015, and 1016 ions/cm2). The gas sensors were fabricated after different characterizations of morphology, phase, and chemical composition. The NO2 sensing experiments revealed that there was an optimal dose (1014 ions/cm2) for which the highest response to NO2 was achieved. At 200 °C, the optimal sensor had a high response of 27.32–10 ppm of NO2. Furthermore, the sensor demonstrated high selectivity to NO2 gas. The boosted gas response of the optimized sensor was due to the formation of n-n homojunctions between the SnO2-SnO2 NWs and the irradiation-induced formation of defects. This study confirms the usefulness of irradiation in boosting the sensing features of metal oxides.",

keywords = "NO gas, Nanowires, Sensing mechanism, SnO, Xe irradiation",

author = "Wansik Oum and Ali Mirzaei and Shin, \{Ka Yoon\} and Kim, \{Eun Bi\} and Kim, \{Hyeong Min\} and Kim, \{Sang Sub\} and Kim, \{Hyoun Woo\}",

note = "Publisher Copyright: {\textcopyright} 2023 Elsevier B.V.",

year = "2023",

month = oct,

day = "15",

doi = "10.1016/j.snb.2023.134206",

language = "English",

volume = "393",

journal = "Sensors and Actuators B: Chemical",

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T1 - Xe+ ion irradiation to boost NO2 sensing characteristics of SnO2 nanowires

AU - Oum, Wansik

AU - Mirzaei, Ali

AU - Shin, Ka Yoon

AU - Kim, Eun Bi

AU - Kim, Hyeong Min

AU - Kim, Sang Sub

AU - Kim, Hyoun Woo

PY - 2023/10/15

Y1 - 2023/10/15

N2 - In this paper, pristine and Xe+ ion-irradiated sensors are studied for NO2 sensing purposes. SnO2 nanowires (NWs) were synthesized via a simple growth method and irradiated with Xe+ ions at different doses (1014, 1015, and 1016 ions/cm2). The gas sensors were fabricated after different characterizations of morphology, phase, and chemical composition. The NO2 sensing experiments revealed that there was an optimal dose (1014 ions/cm2) for which the highest response to NO2 was achieved. At 200 °C, the optimal sensor had a high response of 27.32–10 ppm of NO2. Furthermore, the sensor demonstrated high selectivity to NO2 gas. The boosted gas response of the optimized sensor was due to the formation of n-n homojunctions between the SnO2-SnO2 NWs and the irradiation-induced formation of defects. This study confirms the usefulness of irradiation in boosting the sensing features of metal oxides.

AB - In this paper, pristine and Xe+ ion-irradiated sensors are studied for NO2 sensing purposes. SnO2 nanowires (NWs) were synthesized via a simple growth method and irradiated with Xe+ ions at different doses (1014, 1015, and 1016 ions/cm2). The gas sensors were fabricated after different characterizations of morphology, phase, and chemical composition. The NO2 sensing experiments revealed that there was an optimal dose (1014 ions/cm2) for which the highest response to NO2 was achieved. At 200 °C, the optimal sensor had a high response of 27.32–10 ppm of NO2. Furthermore, the sensor demonstrated high selectivity to NO2 gas. The boosted gas response of the optimized sensor was due to the formation of n-n homojunctions between the SnO2-SnO2 NWs and the irradiation-induced formation of defects. This study confirms the usefulness of irradiation in boosting the sensing features of metal oxides.

KW - NO gas

KW - Nanowires

KW - Sensing mechanism

KW - SnO

KW - Xe irradiation

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DO - 10.1016/j.snb.2023.134206

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VL - 393

JO - Sensors and Actuators B: Chemical

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