Unipolar resistance switching characteristics in a thick ZnO/Cu/ZnO multilayer structure

Tran Le; Hoang Cao Son Tran; Van Hieu Le; Tuan Tran; Cao Vinh Tran; Thanh Tan Vo; Mau Chien Dang; Sang Sub Kim; Jaichan Lee; Bach Thang Phan

doi:10.3938/jkps.60.1087

Unipolar resistance switching characteristics in a thick ZnO/Cu/ZnO multilayer structure

Tran Le, Hoang Cao Son Tran, Van Hieu Le, Tuan Tran, Cao Vinh Tran, Thanh Tan Vo, Mau Chien Dang, Sang Sub Kim, Jaichan Lee, Bach Thang Phan

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The resistance switching mechanism and the electrical conduction of thick Cu/ZnO/Cu/ZnO/Cu structures were investigated for various ZnO thicknesses (40, 80, 160, and 320 nm) when the thickness of the middle Cu layer was 2 nm. The ZnO films had a microstructure with columnar grains normal to the substrate. The switching voltages (VSET and VRESET) varied with the thickness of the ZnO layer. A symmetric electrode structure exhibited a unipolar resistance switching. The electrical transport of both high-resistance state (HRS) and low-resistance state (LRS) was Ohmic conduction, and the resistance switching mechanism was driven by the formation and the rupture of Cu conducting paths.

Original language	English
Pages (from-to)	1087-1091
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	60
Issue number	7
DOIs	https://doi.org/10.3938/jkps.60.1087
State	Published - 2012

Keywords

Random access memory
Resistance switching
Sputtering
ZnO

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title = "Unipolar resistance switching characteristics in a thick ZnO/Cu/ZnO multilayer structure",

abstract = "The resistance switching mechanism and the electrical conduction of thick Cu/ZnO/Cu/ZnO/Cu structures were investigated for various ZnO thicknesses (40, 80, 160, and 320 nm) when the thickness of the middle Cu layer was 2 nm. The ZnO films had a microstructure with columnar grains normal to the substrate. The switching voltages (VSET and VRESET) varied with the thickness of the ZnO layer. A symmetric electrode structure exhibited a unipolar resistance switching. The electrical transport of both high-resistance state (HRS) and low-resistance state (LRS) was Ohmic conduction, and the resistance switching mechanism was driven by the formation and the rupture of Cu conducting paths.",

keywords = "Random access memory, Resistance switching, Sputtering, ZnO",

author = "Tran Le and Tran, \{Hoang Cao Son\} and Le, \{Van Hieu\} and Tuan Tran and Tran, \{Cao Vinh\} and Vo, \{Thanh Tan\} and Dang, \{Mau Chien\} and Kim, \{Sang Sub\} and Jaichan Lee and Phan, \{Bach Thang\}",

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TY - JOUR

T1 - Unipolar resistance switching characteristics in a thick ZnO/Cu/ZnO multilayer structure

AU - Le, Tran

AU - Tran, Hoang Cao Son

AU - Le, Van Hieu

AU - Tran, Tuan

AU - Tran, Cao Vinh

AU - Vo, Thanh Tan

AU - Dang, Mau Chien

AU - Kim, Sang Sub

AU - Lee, Jaichan

AU - Phan, Bach Thang

PY - 2012

Y1 - 2012

N2 - The resistance switching mechanism and the electrical conduction of thick Cu/ZnO/Cu/ZnO/Cu structures were investigated for various ZnO thicknesses (40, 80, 160, and 320 nm) when the thickness of the middle Cu layer was 2 nm. The ZnO films had a microstructure with columnar grains normal to the substrate. The switching voltages (VSET and VRESET) varied with the thickness of the ZnO layer. A symmetric electrode structure exhibited a unipolar resistance switching. The electrical transport of both high-resistance state (HRS) and low-resistance state (LRS) was Ohmic conduction, and the resistance switching mechanism was driven by the formation and the rupture of Cu conducting paths.

AB - The resistance switching mechanism and the electrical conduction of thick Cu/ZnO/Cu/ZnO/Cu structures were investigated for various ZnO thicknesses (40, 80, 160, and 320 nm) when the thickness of the middle Cu layer was 2 nm. The ZnO films had a microstructure with columnar grains normal to the substrate. The switching voltages (VSET and VRESET) varied with the thickness of the ZnO layer. A symmetric electrode structure exhibited a unipolar resistance switching. The electrical transport of both high-resistance state (HRS) and low-resistance state (LRS) was Ohmic conduction, and the resistance switching mechanism was driven by the formation and the rupture of Cu conducting paths.

KW - Random access memory

KW - Resistance switching

KW - Sputtering

KW - ZnO

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U2 - 10.3938/jkps.60.1087

DO - 10.3938/jkps.60.1087

M3 - Article

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VL - 60

SP - 1087

EP - 1091

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 7

ER -

Unipolar resistance switching characteristics in a thick ZnO/Cu/ZnO multilayer structure

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Keywords

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