Trap distribution and time constant extraction using deep level trap technique for thin film transistors

The deep trap states in polycrystalline silicon thin film transistors were monitored through capacitance transients containing electron trapping in depletion region. The specific sweep setup in combination with the deep level transient spectroscopy based theory and quasi-static capacitance-voltage measurement were used to extract the field dependent electron capture time constants and trap profile of deep trap levels with high resolution of trap density. The validity of our model was well applied to reconstruct the recorded transients by Laplace transform of a spectra density function which was simply built by Dirac delta function.