Trap distribution and field effect transistor (FET) of perylene by organic molecular beam deposition (OMBD)

T. Y. Choi; H. S. Kang; D. H. Park; J. M. Koo; J. K. Lee; S. D. Ahn; J. Joo

doi:10.1016/S0379-6779(02)01187-6

Trap distribution and field effect transistor (FET) of perylene by organic molecular beam deposition (OMBD)

T. Y. Choi, H. S. Kang, D. H. Park, J. M. Koo, J. K. Lee, S. D. Ahn, J. Joo

Korea University

Research output: Contribution to journal › Conference article › peer-review

11 Scopus citations

Abstract

Organic semiconducting perylene molecule was deposited as active layer on the FET pattern by using organic molecular beam deposition (OMBD) method. For the morphology and structure, we performed the atomic force microscopy, scanning electron microscopy, and X-ray diffraction experiments. From the I-V characteristics, bulk trap density, trap distribution, and electric field dependent mobility were estimated. Thin film field effect transistor based on perylene molecule was fabricated. From the results of the current modulation with different gate voltages of the FET, gate induced carrier concentration and field effect mobility were obtained. We observed Gaussian-like deep trap distribution, and that mobility was 3 × 10^-7 cm²/Vs.

Original language	English
Pages (from-to)	929-930
Number of pages	2
Journal	Synthetic Metals
Volume	137
Issue number	1-3
DOIs	https://doi.org/10.1016/S0379-6779(02)01187-6
State	Published - 4 Apr 2003
Externally published	Yes
Event	ICSM 2002 - Shanghai, China Duration: 29 Jun 2002 → 5 Jul 2002

Keywords

Field effect transistor
Mobility
Organic molecular beam deposition
Perylene

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10.1016/S0379-6779(02)01187-6

Cite this

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title = "Trap distribution and field effect transistor (FET) of perylene by organic molecular beam deposition (OMBD)",

abstract = "Organic semiconducting perylene molecule was deposited as active layer on the FET pattern by using organic molecular beam deposition (OMBD) method. For the morphology and structure, we performed the atomic force microscopy, scanning electron microscopy, and X-ray diffraction experiments. From the I-V characteristics, bulk trap density, trap distribution, and electric field dependent mobility were estimated. Thin film field effect transistor based on perylene molecule was fabricated. From the results of the current modulation with different gate voltages of the FET, gate induced carrier concentration and field effect mobility were obtained. We observed Gaussian-like deep trap distribution, and that mobility was 3 × 10-7 cm2/Vs.",

keywords = "Field effect transistor, Mobility, Organic molecular beam deposition, Perylene",

author = "Choi, {T. Y.} and Kang, {H. S.} and Park, {D. H.} and Koo, {J. M.} and Lee, {J. K.} and Ahn, {S. D.} and J. Joo",

year = "2003",

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doi = "10.1016/S0379-6779(02)01187-6",

language = "English",

volume = "137",

pages = "929--930",

journal = "Synthetic Metals",

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number = "1-3",

note = "ICSM 2002 ; Conference date: 29-06-2002 Through 05-07-2002",

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TY - JOUR

T1 - Trap distribution and field effect transistor (FET) of perylene by organic molecular beam deposition (OMBD)

AU - Choi, T. Y.

AU - Kang, H. S.

AU - Park, D. H.

AU - Koo, J. M.

AU - Lee, J. K.

AU - Ahn, S. D.

AU - Joo, J.

PY - 2003/4/4

Y1 - 2003/4/4

N2 - Organic semiconducting perylene molecule was deposited as active layer on the FET pattern by using organic molecular beam deposition (OMBD) method. For the morphology and structure, we performed the atomic force microscopy, scanning electron microscopy, and X-ray diffraction experiments. From the I-V characteristics, bulk trap density, trap distribution, and electric field dependent mobility were estimated. Thin film field effect transistor based on perylene molecule was fabricated. From the results of the current modulation with different gate voltages of the FET, gate induced carrier concentration and field effect mobility were obtained. We observed Gaussian-like deep trap distribution, and that mobility was 3 × 10-7 cm2/Vs.

AB - Organic semiconducting perylene molecule was deposited as active layer on the FET pattern by using organic molecular beam deposition (OMBD) method. For the morphology and structure, we performed the atomic force microscopy, scanning electron microscopy, and X-ray diffraction experiments. From the I-V characteristics, bulk trap density, trap distribution, and electric field dependent mobility were estimated. Thin film field effect transistor based on perylene molecule was fabricated. From the results of the current modulation with different gate voltages of the FET, gate induced carrier concentration and field effect mobility were obtained. We observed Gaussian-like deep trap distribution, and that mobility was 3 × 10-7 cm2/Vs.

KW - Field effect transistor

KW - Mobility

KW - Organic molecular beam deposition

KW - Perylene

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U2 - 10.1016/S0379-6779(02)01187-6

DO - 10.1016/S0379-6779(02)01187-6

M3 - Conference article

AN - SCOPUS:0037419213

SN - 0379-6779

VL - 137

SP - 929

EP - 930

JO - Synthetic Metals

JF - Synthetic Metals

IS - 1-3

T2 - ICSM 2002

Y2 - 29 June 2002 through 5 July 2002

ER -

Trap distribution and field effect transistor (FET) of perylene by organic molecular beam deposition (OMBD)

Abstract

Keywords

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