@inproceedings{9cee27766e4c4639b512820dc6a65713,
title = "Threshold voltage of nanoscale si gate-all-around MOSFET: Short-channel, quantum, and Volume Effects",
abstract = "The threshold voltage (VT) control of gate-all-around (GAA) MOSFETs as an extreme case of multi-gate MOSFETs is studied. After breaking down the components constituting VT into several terms, their relative sizes are compared using TCAD technique and analytical calculation of quantum mechanical problem. As a result, the channel diameter is found to be an important knob to control VT of a GAA MOSFET, which influences on short-channel effect, quantum confinement effect and other effects.",
keywords = "field-effect transistor, gate-all-around, quantum effect, short-channel effect, threshold voltage, volume effect",
author = "Sun, {Min Chul} and Kim, {Hyun Woo} and Kim, {Sang Wan} and Lee, {Jung Han} and Hyungjin Kim and Park, {Byung Gook}",
year = "2013",
doi = "10.1109/INEC.2013.6465943",
language = "English",
isbn = "9781467348416",
series = "Proceedings - Winter Simulation Conference",
pages = "27--29",
booktitle = "Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013",
note = "2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 ; Conference date: 02-01-2013 Through 04-01-2013",
}