Threshold voltage of nanoscale si gate-all-around MOSFET: Short-channel, quantum, and Volume Effects

Min Chul Sun, Hyun Woo Kim, Sang Wan Kim, Jung Han Lee, Hyungjin Kim, Byung Gook Park

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The threshold voltage (VT) control of gate-all-around (GAA) MOSFETs as an extreme case of multi-gate MOSFETs is studied. After breaking down the components constituting VT into several terms, their relative sizes are compared using TCAD technique and analytical calculation of quantum mechanical problem. As a result, the channel diameter is found to be an important knob to control VT of a GAA MOSFET, which influences on short-channel effect, quantum confinement effect and other effects.

Original languageEnglish
Title of host publicationProceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Pages27-29
Number of pages3
DOIs
StatePublished - 2013
Externally publishedYes
Event2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 - Singapore, Singapore
Duration: 2 Jan 20134 Jan 2013

Publication series

NameProceedings - Winter Simulation Conference
ISSN (Print)0891-7736

Conference

Conference2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Country/TerritorySingapore
CitySingapore
Period2/01/134/01/13

Keywords

  • field-effect transistor
  • gate-all-around
  • quantum effect
  • short-channel effect
  • threshold voltage
  • volume effect

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