Abstract
The electrical transport properties of high quality ZnO nanorods, synthesized by catalyst-free metalorganic chemical vapour deposition, were studied as a function of temperature by fabricating field effect transistors based on single ZnO nanorods. The thermally activated Schottky emission was found to be a ruling transport mechanism in the temperature regime of 70-293 K over a wide range of electric fields with an effective barrier height of ∼120 meV. In contrast, the Fowler-Nordheim tunnelling dominated at low temperatures (<70 K) under very high electric fields.
Original language | English |
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Pages (from-to) | 1255-1259 |
Number of pages | 5 |
Journal | Nanotechnology |
Volume | 17 |
Issue number | 5 |
DOIs | |
State | Published - 14 Mar 2006 |
Externally published | Yes |