The temperature-dependent electrical transport mechanism of single ZnO nanorods

Jae Young Park, Hwangyou Oh, Ju Jin Kim, Sang Sub Kim

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

The electrical transport properties of high quality ZnO nanorods, synthesized by catalyst-free metalorganic chemical vapour deposition, were studied as a function of temperature by fabricating field effect transistors based on single ZnO nanorods. The thermally activated Schottky emission was found to be a ruling transport mechanism in the temperature regime of 70-293 K over a wide range of electric fields with an effective barrier height of ∼120 meV. In contrast, the Fowler-Nordheim tunnelling dominated at low temperatures (<70 K) under very high electric fields.

Original languageEnglish
Pages (from-to)1255-1259
Number of pages5
JournalNanotechnology
Volume17
Issue number5
DOIs
StatePublished - 14 Mar 2006
Externally publishedYes

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