"Textured" network devices: Overcoming fundamental limitations of nanotube/nanowire network-based devices

A study was conducted to demonstrate a strategy for solving the problem of fundamental limitations of nanotube and nanowire network-based devices. The strategy solved the problem and overcame the limitations by controlling the connectivity of swCNT and nanowire networks. Textured network channels were prepared through the direct assembly method in the strategy and utilized to fabricate high-performance network-based devices. The yield of swCNT network-based field-effect transistors (FETs) was improved significantly with a large on-off ratio without removing metallic swCNTs. Polarized Raman spectroscopy was used to investigate the structures of the textured network devices, while experimental and simulation results showed that their conductivity and mobility increased with reduced line width. These findings also revealed that the strategy had the potential to emerge as a solution for fabricating nanoscale devices based on swCNT and nanowire networks.