Temperature-controlled synthesis of In2Ge2O 7 nanowires and their photoluminescence properties

Sang Sub Kim; Jae Young Park; Hyo Sung Kim; Han Gil Na; Ju Chan Yang; Seung Hyun Shim; Chongmu Lee; Doyoung Park; Dahyun Nam; Hyeonsik Cheong; Hyoun Woo Kim

doi:10.1088/0022-3727/44/2/025502

Temperature-controlled synthesis of In₂Ge₂O ₇ nanowires and their photoluminescence properties

Sang Sub Kim, Jae Young Park, Hyo Sung Kim, Han Gil Na, Ju Chan Yang, Seung Hyun Shim, Chongmu Lee, Doyoung Park, Dahyun Nam, Hyeonsik Cheong, Hyoun Woo Kim

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

By controlling the heating temperature of a mixture of In and Ge powders, we have obtained monoclinic In₂Ge₂O₇ nanowires at 600-700 °C, whereas we have produced cubic In₂O₃ nanowires at 900 °C. The In₂Ge₂O₇ nanowires grown at 600 °C were terminated by Au-containing nanoparticles, giving evidence that the vapour-liquid-solid model is the major growth mechanism. With the growth process at 700-900 °C being dominated by a vapour-solid process, we have discussed the temperature-induced change in growth mechanisms. Photoluminescence measurements at 10-300K revealed a broad visible emission centred at around 2.5 eV.

Original language	English
Article number	25502
Journal	Journal Physics D: Applied Physics
Volume	44
Issue number	2
DOIs	https://doi.org/10.1088/0022-3727/44/2/025502
State	Published - 19 Jan 2011

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title = "Temperature-controlled synthesis of In2Ge2O 7 nanowires and their photoluminescence properties",

abstract = "By controlling the heating temperature of a mixture of In and Ge powders, we have obtained monoclinic In2Ge2O7 nanowires at 600-700 °C, whereas we have produced cubic In2O3 nanowires at 900 °C. The In2Ge2O7 nanowires grown at 600 °C were terminated by Au-containing nanoparticles, giving evidence that the vapour-liquid-solid model is the major growth mechanism. With the growth process at 700-900 °C being dominated by a vapour-solid process, we have discussed the temperature-induced change in growth mechanisms. Photoluminescence measurements at 10-300K revealed a broad visible emission centred at around 2.5 eV.",

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T1 - Temperature-controlled synthesis of In2Ge2O 7 nanowires and their photoluminescence properties

AU - Kim, Sang Sub

AU - Park, Jae Young

AU - Kim, Hyo Sung

AU - Na, Han Gil

AU - Yang, Ju Chan

AU - Shim, Seung Hyun

AU - Lee, Chongmu

AU - Park, Doyoung

AU - Nam, Dahyun

AU - Cheong, Hyeonsik

AU - Kim, Hyoun Woo

PY - 2011/1/19

Y1 - 2011/1/19

N2 - By controlling the heating temperature of a mixture of In and Ge powders, we have obtained monoclinic In2Ge2O7 nanowires at 600-700 °C, whereas we have produced cubic In2O3 nanowires at 900 °C. The In2Ge2O7 nanowires grown at 600 °C were terminated by Au-containing nanoparticles, giving evidence that the vapour-liquid-solid model is the major growth mechanism. With the growth process at 700-900 °C being dominated by a vapour-solid process, we have discussed the temperature-induced change in growth mechanisms. Photoluminescence measurements at 10-300K revealed a broad visible emission centred at around 2.5 eV.

AB - By controlling the heating temperature of a mixture of In and Ge powders, we have obtained monoclinic In2Ge2O7 nanowires at 600-700 °C, whereas we have produced cubic In2O3 nanowires at 900 °C. The In2Ge2O7 nanowires grown at 600 °C were terminated by Au-containing nanoparticles, giving evidence that the vapour-liquid-solid model is the major growth mechanism. With the growth process at 700-900 °C being dominated by a vapour-solid process, we have discussed the temperature-induced change in growth mechanisms. Photoluminescence measurements at 10-300K revealed a broad visible emission centred at around 2.5 eV.

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Temperature-controlled synthesis of In₂Ge₂O ₇ nanowires and their photoluminescence properties

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