Tailoring of Ferroelectric Coercive Field and Polarization with Ferroelectric and Antiferroelectric HfxZr1-xO2 Bilayer Structure

Geon Park; An H. Nguyen; Manh Cuong Nguyen; Anh Duy Nguyen; Hyunsoo Kim; Jaekyeong Kim; Kyungsoo Hwang; Hoyeon Shin; Siun Song; Rino Choi

doi:10.1109/LED.2024.3435381

Tailoring of Ferroelectric Coercive Field and Polarization with Ferroelectric and Antiferroelectric Hf_xZr_1-xO₂ Bilayer Structure

Geon Park, An H. Nguyen, Manh Cuong Nguyen, Anh Duy Nguyen, Hyunsoo Kim, Jaekyeong Kim, Kyungsoo Hwang, Hoyeon Shin, Siun Song, Rino Choi

Inha University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this letter, the advantages of an antiferroelectric (AFE) and ferroelectric (FE) bilayer stack made of Hf_xZr_1-x O₂(HZO) with different compositions were reported. Compared to the monolayer ferroelectric control sample, Mo/FE/Mo, the Mo/FE/AFE/Mo, and Mo/AFE/FE/Mo stacks exhibited a significant decrease in the coercive field (E_c). A higher dielectric constant of AFE increased the voltage distribution across the FE layer in the bilayer HZO structure, leading to a decrease in E_c. Furthermore, the capacitor with Mo/AFE/FE/Mo exhibited 28% higher polarization, P_r (2P_r = 45.9 μ C/cm²) , than the control sample, while this significant increase of P_r was not observed in the capacitor with Mo/FE/AFE/Mo. Electrical measurements of the capacitors with FE and AFE having various thicknesses showed that the dielectric constants and phase composition depend on the deposition sequence. A higher orthogonal phase ratio was achieved in the Mo/AFE/FE/Mo stack compared to the Mo/FE/AFE/Mo stack, resulting in higher polarization. Furthermore, bilayer capacitors with Mo/AFE/FE/Mo showed more robust long time reliability, such as endurance and retention.

Original language	English
Pages (from-to)	1997-2000
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	45
Issue number	10
DOIs	https://doi.org/10.1109/LED.2024.3435381
State	Published - 2024

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

antiferroelectric
coercive field
ferroelectric
HfZrO bilayer
low power consumption
polarization
thin film growth
voltage distribution

Access to Document

10.1109/LED.2024.3435381

Cite this

@article{4e69410df0fa431ca4e29d45f1cefd72,

title = "Tailoring of Ferroelectric Coercive Field and Polarization with Ferroelectric and Antiferroelectric HfxZr1-xO2 Bilayer Structure",

abstract = "In this letter, the advantages of an antiferroelectric (AFE) and ferroelectric (FE) bilayer stack made of HfxZr1-x O2(HZO) with different compositions were reported. Compared to the monolayer ferroelectric control sample, Mo/FE/Mo, the Mo/FE/AFE/Mo, and Mo/AFE/FE/Mo stacks exhibited a significant decrease in the coercive field (Ec). A higher dielectric constant of AFE increased the voltage distribution across the FE layer in the bilayer HZO structure, leading to a decrease in Ec. Furthermore, the capacitor with Mo/AFE/FE/Mo exhibited 28% higher polarization, Pr (2Pr = 45.9 μ C/cm2) , than the control sample, while this significant increase of Pr was not observed in the capacitor with Mo/FE/AFE/Mo. Electrical measurements of the capacitors with FE and AFE having various thicknesses showed that the dielectric constants and phase composition depend on the deposition sequence. A higher orthogonal phase ratio was achieved in the Mo/AFE/FE/Mo stack compared to the Mo/FE/AFE/Mo stack, resulting in higher polarization. Furthermore, bilayer capacitors with Mo/AFE/FE/Mo showed more robust long time reliability, such as endurance and retention.",

keywords = "antiferroelectric, coercive field, ferroelectric, HfZrO bilayer, low power consumption, polarization, thin film growth, voltage distribution",

author = "Geon Park and Nguyen, {An H.} and Nguyen, {Manh Cuong} and Nguyen, {Anh Duy} and Hyunsoo Kim and Jaekyeong Kim and Kyungsoo Hwang and Hoyeon Shin and Siun Song and Rino Choi",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2024",

doi = "10.1109/LED.2024.3435381",

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T1 - Tailoring of Ferroelectric Coercive Field and Polarization with Ferroelectric and Antiferroelectric HfxZr1-xO2 Bilayer Structure

AU - Park, Geon

AU - Nguyen, An H.

AU - Nguyen, Manh Cuong

AU - Nguyen, Anh Duy

AU - Kim, Hyunsoo

AU - Kim, Jaekyeong

AU - Hwang, Kyungsoo

AU - Shin, Hoyeon

AU - Song, Siun

AU - Choi, Rino

PY - 2024

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N2 - In this letter, the advantages of an antiferroelectric (AFE) and ferroelectric (FE) bilayer stack made of HfxZr1-x O2(HZO) with different compositions were reported. Compared to the monolayer ferroelectric control sample, Mo/FE/Mo, the Mo/FE/AFE/Mo, and Mo/AFE/FE/Mo stacks exhibited a significant decrease in the coercive field (Ec). A higher dielectric constant of AFE increased the voltage distribution across the FE layer in the bilayer HZO structure, leading to a decrease in Ec. Furthermore, the capacitor with Mo/AFE/FE/Mo exhibited 28% higher polarization, Pr (2Pr = 45.9 μ C/cm2) , than the control sample, while this significant increase of Pr was not observed in the capacitor with Mo/FE/AFE/Mo. Electrical measurements of the capacitors with FE and AFE having various thicknesses showed that the dielectric constants and phase composition depend on the deposition sequence. A higher orthogonal phase ratio was achieved in the Mo/AFE/FE/Mo stack compared to the Mo/FE/AFE/Mo stack, resulting in higher polarization. Furthermore, bilayer capacitors with Mo/AFE/FE/Mo showed more robust long time reliability, such as endurance and retention.

AB - In this letter, the advantages of an antiferroelectric (AFE) and ferroelectric (FE) bilayer stack made of HfxZr1-x O2(HZO) with different compositions were reported. Compared to the monolayer ferroelectric control sample, Mo/FE/Mo, the Mo/FE/AFE/Mo, and Mo/AFE/FE/Mo stacks exhibited a significant decrease in the coercive field (Ec). A higher dielectric constant of AFE increased the voltage distribution across the FE layer in the bilayer HZO structure, leading to a decrease in Ec. Furthermore, the capacitor with Mo/AFE/FE/Mo exhibited 28% higher polarization, Pr (2Pr = 45.9 μ C/cm2) , than the control sample, while this significant increase of Pr was not observed in the capacitor with Mo/FE/AFE/Mo. Electrical measurements of the capacitors with FE and AFE having various thicknesses showed that the dielectric constants and phase composition depend on the deposition sequence. A higher orthogonal phase ratio was achieved in the Mo/AFE/FE/Mo stack compared to the Mo/FE/AFE/Mo stack, resulting in higher polarization. Furthermore, bilayer capacitors with Mo/AFE/FE/Mo showed more robust long time reliability, such as endurance and retention.

KW - antiferroelectric

KW - coercive field

KW - ferroelectric

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KW - low power consumption

KW - polarization

KW - thin film growth

KW - voltage distribution

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