Switching characteristic analysis of tunnel field-Effect transistor (TFET) inverters

Dae Woong Kwon; Jang Hyun Kim; Euyhwan Park; Junil Lee; Sangwan Kim; Byung Gook Park

doi:10.1166/jnn.2017.14714

Switching characteristic analysis of tunnel field-Effect transistor (TFET) inverters

Dae Woong Kwon, Jang Hyun Kim, Euyhwan Park, Junil Lee, Sangwan Kim, Byung Gook Park

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In order to verify the effects of large gate-to-drain capacitance (C_gd coupled with low tunneling current on the switching characteristics of tunnel field-effect transistor (TFET) inverters, TFET and MOSFET inverter circuits with equalized saturation current (I_sat and C_gd levels are simulated with the help of mixed-mode device and circuit simulations. From the simulation results, it is revealed that additional mechanisms also degrade the pre-shoot and falling/rising delay of the output voltage (V_out as well as the low tunneling current and large C_gd inherent in TFETs. A one-directional current flow due to the asymmetric polarity of the source/drain and the superlinear onset of the output characteristics along with an ambipolar current are found to be among the main causes of the pre-shoot and the falling/rising delay, respectively.

Original language	English
Pages (from-to)	7134-7139
Number of pages	6
Journal	Journal of Nanoscience and Nanotechnology
Volume	17
Issue number	10
DOIs	https://doi.org/10.1166/jnn.2017.14714
State	Published - Oct 2017

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Copyright © 2017 American Scientific Publishers All rights reserved

Keywords

One-Directional Current of TFET
Superlinear Onset of TFET
Switching Characteristic of TFET
TFET

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10.1166/jnn.2017.14714

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@article{75db088ef649495cb765053b22bf18e9,

title = "Switching characteristic analysis of tunnel field-Effect transistor (TFET) inverters",

abstract = "In order to verify the effects of large gate-to-drain capacitance (Cgd coupled with low tunneling current on the switching characteristics of tunnel field-effect transistor (TFET) inverters, TFET and MOSFET inverter circuits with equalized saturation current (Isat and Cgd levels are simulated with the help of mixed-mode device and circuit simulations. From the simulation results, it is revealed that additional mechanisms also degrade the pre-shoot and falling/rising delay of the output voltage (Vout as well as the low tunneling current and large Cgd inherent in TFETs. A one-directional current flow due to the asymmetric polarity of the source/drain and the superlinear onset of the output characteristics along with an ambipolar current are found to be among the main causes of the pre-shoot and the falling/rising delay, respectively.",

keywords = "One-Directional Current of TFET, Superlinear Onset of TFET, Switching Characteristic of TFET, TFET",

author = "Kwon, {Dae Woong} and Kim, {Jang Hyun} and Euyhwan Park and Junil Lee and Sangwan Kim and Park, {Byung Gook}",

year = "2017",

month = oct,

doi = "10.1166/jnn.2017.14714",

language = "English",

volume = "17",

pages = "7134--7139",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

number = "10",

}

TY - JOUR

T1 - Switching characteristic analysis of tunnel field-Effect transistor (TFET) inverters

AU - Kwon, Dae Woong

AU - Kim, Jang Hyun

AU - Park, Euyhwan

AU - Lee, Junil

AU - Kim, Sangwan

AU - Park, Byung Gook

PY - 2017/10

Y1 - 2017/10

N2 - In order to verify the effects of large gate-to-drain capacitance (Cgd coupled with low tunneling current on the switching characteristics of tunnel field-effect transistor (TFET) inverters, TFET and MOSFET inverter circuits with equalized saturation current (Isat and Cgd levels are simulated with the help of mixed-mode device and circuit simulations. From the simulation results, it is revealed that additional mechanisms also degrade the pre-shoot and falling/rising delay of the output voltage (Vout as well as the low tunneling current and large Cgd inherent in TFETs. A one-directional current flow due to the asymmetric polarity of the source/drain and the superlinear onset of the output characteristics along with an ambipolar current are found to be among the main causes of the pre-shoot and the falling/rising delay, respectively.

AB - In order to verify the effects of large gate-to-drain capacitance (Cgd coupled with low tunneling current on the switching characteristics of tunnel field-effect transistor (TFET) inverters, TFET and MOSFET inverter circuits with equalized saturation current (Isat and Cgd levels are simulated with the help of mixed-mode device and circuit simulations. From the simulation results, it is revealed that additional mechanisms also degrade the pre-shoot and falling/rising delay of the output voltage (Vout as well as the low tunneling current and large Cgd inherent in TFETs. A one-directional current flow due to the asymmetric polarity of the source/drain and the superlinear onset of the output characteristics along with an ambipolar current are found to be among the main causes of the pre-shoot and the falling/rising delay, respectively.

KW - One-Directional Current of TFET

KW - Superlinear Onset of TFET

KW - Switching Characteristic of TFET

KW - TFET

UR - http://www.scopus.com/inward/record.url?scp=85025815282&partnerID=8YFLogxK

U2 - 10.1166/jnn.2017.14714

DO - 10.1166/jnn.2017.14714

M3 - Article

AN - SCOPUS:85025815282

SN - 1533-4880

VL - 17

SP - 7134

EP - 7139

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 10

ER -

Switching characteristic analysis of tunnel field-Effect transistor (TFET) inverters

Abstract

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Keywords

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