Abstract
This letter examined the insertion effect of thermal TiO2 films on the device performance and photo-bias instability of zinc tin oxide (ZTO) thin-film transistors (TFTs). A 5.0-nm-thick TiOx device inserted at the ZTO/silicon nitride (SiNx) interface exhibited slightly lower mobility (9.4 cm2V.s ) compared with that (14.1 cm2V.s) of the reference device with a ZTO/SiNx stack. On the other hand, the negative gate-bias-illumination-stress-induced instability of the TiO x-inserted device was strongly suppressed from 11.0 V (reference device) to 3.0 V. This was attributed to the increase in valence band offset between TiOx and ZTO films, leading to the diminished injection of photo-induced hole carriers into the underlying SiNx bulk region.
Original language | English |
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Article number | 6403501 |
Pages (from-to) | 253-255 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 34 |
Issue number | 2 |
DOIs | |
State | Published - 2013 |
Keywords
- Photo-bias stability
- thermal oxidation
- thin-film transistors (TFTs)
- titanium oxide
- zinc tin oxide (ZTO)