Suppression in negative bias illumination stress instability of zinc tin oxide transistor by insertion of thermal TiOx Films

Chang Kyu Lee; Hong Yoon Jung; Se Yeob Park; Byeong Geun Son; Chul Kyu Lee; Hyo Jin Kim; Rino Choi; Dae Hwan Kim; Jong Uk Bae; Woo Sup Shin; Jae Kyeong Jeong

doi:10.1109/LED.2012.2230242

Suppression in negative bias illumination stress instability of zinc tin oxide transistor by insertion of thermal TiO_x Films

Chang Kyu Lee, Hong Yoon Jung, Se Yeob Park, Byeong Geun Son, Chul Kyu Lee, Hyo Jin Kim, Rino Choi, Dae Hwan Kim, Jong Uk Bae, Woo Sup Shin, Jae Kyeong Jeong

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

This letter examined the insertion effect of thermal TiO₂ films on the device performance and photo-bias instability of zinc tin oxide (ZTO) thin-film transistors (TFTs). A 5.0-nm-thick TiO_x device inserted at the ZTO/silicon nitride (SiN_x) interface exhibited slightly lower mobility (9.4 cm²V.s ) compared with that (14.1 cm²V.s) of the reference device with a ZTO/SiN_x stack. On the other hand, the negative gate-bias-illumination-stress-induced instability of the TiO _x-inserted device was strongly suppressed from 11.0 V (reference device) to 3.0 V. This was attributed to the increase in valence band offset between TiO_x and ZTO films, leading to the diminished injection of photo-induced hole carriers into the underlying SiN_x bulk region.

Original language	English
Article number	6403501
Pages (from-to)	253-255
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	2
DOIs	https://doi.org/10.1109/LED.2012.2230242
State	Published - 2013

Keywords

Photo-bias stability
thermal oxidation
thin-film transistors (TFTs)
titanium oxide
zinc tin oxide (ZTO)

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10.1109/LED.2012.2230242

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Lee, C. K., Jung, H. Y., Park, S. Y., Son, B. G., Lee, C. K., Kim, H. J., Choi, R., Kim, D. H., Bae, J. U., Shin, W. S., & Jeong, J. K. (2013). Suppression in negative bias illumination stress instability of zinc tin oxide transistor by insertion of thermal TiO_x Films. IEEE Electron Device Letters, 34(2), 253-255. Article 6403501. https://doi.org/10.1109/LED.2012.2230242

@article{13c17b38e5494ab1b5c6a3fa824d179a,

title = "Suppression in negative bias illumination stress instability of zinc tin oxide transistor by insertion of thermal TiOx Films",

abstract = "This letter examined the insertion effect of thermal TiO2 films on the device performance and photo-bias instability of zinc tin oxide (ZTO) thin-film transistors (TFTs). A 5.0-nm-thick TiOx device inserted at the ZTO/silicon nitride (SiNx) interface exhibited slightly lower mobility (9.4 cm2V.s ) compared with that (14.1 cm2V.s) of the reference device with a ZTO/SiNx stack. On the other hand, the negative gate-bias-illumination-stress-induced instability of the TiO x-inserted device was strongly suppressed from 11.0 V (reference device) to 3.0 V. This was attributed to the increase in valence band offset between TiOx and ZTO films, leading to the diminished injection of photo-induced hole carriers into the underlying SiNx bulk region.",

keywords = "Photo-bias stability, thermal oxidation, thin-film transistors (TFTs), titanium oxide, zinc tin oxide (ZTO)",

author = "Lee, {Chang Kyu} and Jung, {Hong Yoon} and Park, {Se Yeob} and Son, {Byeong Geun} and Lee, {Chul Kyu} and Kim, {Hyo Jin} and Rino Choi and Kim, {Dae Hwan} and Bae, {Jong Uk} and Shin, {Woo Sup} and Jeong, {Jae Kyeong}",

year = "2013",

doi = "10.1109/LED.2012.2230242",

language = "English",

volume = "34",

pages = "253--255",

journal = "IEEE Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Suppression in negative bias illumination stress instability of zinc tin oxide transistor by insertion of thermal TiOx Films

AU - Lee, Chang Kyu

AU - Jung, Hong Yoon

AU - Park, Se Yeob

AU - Son, Byeong Geun

AU - Lee, Chul Kyu

AU - Kim, Hyo Jin

AU - Choi, Rino

AU - Kim, Dae Hwan

AU - Bae, Jong Uk

AU - Shin, Woo Sup

AU - Jeong, Jae Kyeong

PY - 2013

Y1 - 2013

N2 - This letter examined the insertion effect of thermal TiO2 films on the device performance and photo-bias instability of zinc tin oxide (ZTO) thin-film transistors (TFTs). A 5.0-nm-thick TiOx device inserted at the ZTO/silicon nitride (SiNx) interface exhibited slightly lower mobility (9.4 cm2V.s ) compared with that (14.1 cm2V.s) of the reference device with a ZTO/SiNx stack. On the other hand, the negative gate-bias-illumination-stress-induced instability of the TiO x-inserted device was strongly suppressed from 11.0 V (reference device) to 3.0 V. This was attributed to the increase in valence band offset between TiOx and ZTO films, leading to the diminished injection of photo-induced hole carriers into the underlying SiNx bulk region.

AB - This letter examined the insertion effect of thermal TiO2 films on the device performance and photo-bias instability of zinc tin oxide (ZTO) thin-film transistors (TFTs). A 5.0-nm-thick TiOx device inserted at the ZTO/silicon nitride (SiNx) interface exhibited slightly lower mobility (9.4 cm2V.s ) compared with that (14.1 cm2V.s) of the reference device with a ZTO/SiNx stack. On the other hand, the negative gate-bias-illumination-stress-induced instability of the TiO x-inserted device was strongly suppressed from 11.0 V (reference device) to 3.0 V. This was attributed to the increase in valence band offset between TiOx and ZTO films, leading to the diminished injection of photo-induced hole carriers into the underlying SiNx bulk region.

KW - Photo-bias stability

KW - thermal oxidation

KW - thin-film transistors (TFTs)

KW - titanium oxide

KW - zinc tin oxide (ZTO)

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U2 - 10.1109/LED.2012.2230242

DO - 10.1109/LED.2012.2230242

M3 - Article

AN - SCOPUS:84873059850

SN - 0741-3106

VL - 34

SP - 253

EP - 255

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

M1 - 6403501

ER -

Suppression in negative bias illumination stress instability of zinc tin oxide transistor by insertion of thermal TiO_x Films

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