Si-doping effect on the enhanced hydrogen storage of single walled carbon nanotubes and graphene

Jung Hyun Cho, Seung Jae Yang, Kunsil Lee, Chong Rae Park

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98 Scopus citations

Abstract

We identified several parameters that correlate with the hydrogen physisorption energy and physicochemical properties of heteronuclear bonding in single-walled carbon nanotubes (SWCNT) and graphene. These parameters were used to find the most promising heteronuclear doping agents for SWCNTs and graphene for enhanced hydrogen storage capacity. Si-doping was showed to increase the amount of physisorbed hydrogen on such surfaces. Grand Canonical Ensemble Monte Carlo (GCMC) simulations showed that the hydrogen storage capacity of 10 at% Si-doped SWCNT (Si-CNT10) could reach a maximum of 2.5 wt%, almost twice the storage capacity of undoped SWCNTs, which were showed to reach a maximum capacity of 1.4 wt% at room temperature. To achieve this capacity, debundling effects of the uneven surfaces of Si-doped SWCNTs were found to be necessary. Similarly, 10 at% Si-doping on graphene (Si-GR10) was showed to increase the hydrogen storage capacity from 0.8 to 2.4 wt%.

Original languageEnglish
Pages (from-to)12286-12295
Number of pages10
JournalInternational Journal of Hydrogen Energy
Volume36
Issue number19
DOIs
StatePublished - Sep 2011
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) [No. 2010-0029244 ].

Keywords

  • Graphene
  • Heteroatom doping
  • Hydrogen storage
  • SWCNT
  • Si-doping

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