Reactive ion etching of Pb(ZrxTi1-x)O3 thin films in an inductively coupled plasma

Research output: Contribution to journalArticlepeer-review

45 Scopus citations

Abstract

Reactive ion etching of PbZrxTi1-xO3 (PZT) thin films was studied by using Cl2/C2F6/Ar gas chemistry in an inductively coupled plasma (ICP). PZT films were deposited on Pt/Ti/SiO2/Si substrates by the sol-gel process. PZT films were etched by varying the etching parameters including coil rf power, dc-bias voltage to the substrate, and gas pressure. Etching characteristics of PZT films were investigated in terms of etch rate, etch selectivity, etch profile and etching mechanism. Etch profile along with etch anisotropy was observed as a function of etching parameter by field emission scanning electron microscopy. For understanding of the etching mechanism, x-ray photoelectron spectroscopy and ICP analysis for film composition were utilized. Finally, the pattern transfer of PZT films with fine geometry was successfully achieved at the optimum etching condition.

Original languageEnglish
Pages (from-to)1894-1900
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number4
StatePublished - Jul 1998
Externally publishedYes

Fingerprint

Dive into the research topics of 'Reactive ion etching of Pb(ZrxTi1-x)O3 thin films in an inductively coupled plasma'. Together they form a unique fingerprint.

Cite this