Pressure effect on the formation of ferroelectric SrBi2Ta2O9 thin films

Kang Yong Song; Yong Kyun Lee; Kyu Sang Lee; Yung Sup Yoon; Hee Kwon Chae; Wan In Lee

doi:10.1143/jjap.39.2791

Pressure effect on the formation of ferroelectric SrBi₂Ta₂O₉ thin films

Kang Yong Song, Yong Kyun Lee, Kyu Sang Lee, Yung Sup Yoon, Hee Kwon Chae, Wan In Lee

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

It has been found that the formation of a ferroelectric phase for the SrBi₂Ta₂O₉ (SBT) thin films derived from sol-gel solution is dependent on the oxygen pressure during the heat-treatment process. Under an elevated oxygen pressure as high as 30 atm, the heat-treatment temperature inducing the ferroelectric SBT phase can be lowered to 650°C. Those films processed at 650°C present satisfactory ferroelectric properties, that is, the remanent polarization (P_r) is 5.0 μC/cm², and the coercive field (E_c) is 43 kV/cm with 5 V application.

Original language	English
Pages (from-to)	2791-2792
Number of pages	2
Journal	Japanese Journal of Applied Physics
Volume	39
Issue number	5 A
DOIs	https://doi.org/10.1143/jjap.39.2791
State	Published - 1 May 2000

Keywords

Ferroelectric
Pressure effect
SBT (SrBiTaO)
Sol-gel process
Thin film

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title = "Pressure effect on the formation of ferroelectric SrBi2Ta2O9 thin films",

abstract = "It has been found that the formation of a ferroelectric phase for the SrBi2Ta2O9 (SBT) thin films derived from sol-gel solution is dependent on the oxygen pressure during the heat-treatment process. Under an elevated oxygen pressure as high as 30 atm, the heat-treatment temperature inducing the ferroelectric SBT phase can be lowered to 650°C. Those films processed at 650°C present satisfactory ferroelectric properties, that is, the remanent polarization (Pr) is 5.0 μC/cm2, and the coercive field (Ec) is 43 kV/cm with 5 V application.",

keywords = "Ferroelectric, Pressure effect, SBT (SrBiTaO), Sol-gel process, Thin film",

author = "Song, {Kang Yong} and Lee, {Yong Kyun} and Lee, {Kyu Sang} and Yoon, {Yung Sup} and Chae, {Hee Kwon} and Lee, {Wan In}",

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TY - JOUR

T1 - Pressure effect on the formation of ferroelectric SrBi2Ta2O9 thin films

AU - Song, Kang Yong

AU - Lee, Yong Kyun

AU - Lee, Kyu Sang

AU - Yoon, Yung Sup

AU - Chae, Hee Kwon

AU - Lee, Wan In

PY - 2000/5/1

Y1 - 2000/5/1

N2 - It has been found that the formation of a ferroelectric phase for the SrBi2Ta2O9 (SBT) thin films derived from sol-gel solution is dependent on the oxygen pressure during the heat-treatment process. Under an elevated oxygen pressure as high as 30 atm, the heat-treatment temperature inducing the ferroelectric SBT phase can be lowered to 650°C. Those films processed at 650°C present satisfactory ferroelectric properties, that is, the remanent polarization (Pr) is 5.0 μC/cm2, and the coercive field (Ec) is 43 kV/cm with 5 V application.

AB - It has been found that the formation of a ferroelectric phase for the SrBi2Ta2O9 (SBT) thin films derived from sol-gel solution is dependent on the oxygen pressure during the heat-treatment process. Under an elevated oxygen pressure as high as 30 atm, the heat-treatment temperature inducing the ferroelectric SBT phase can be lowered to 650°C. Those films processed at 650°C present satisfactory ferroelectric properties, that is, the remanent polarization (Pr) is 5.0 μC/cm2, and the coercive field (Ec) is 43 kV/cm with 5 V application.

KW - Ferroelectric

KW - Pressure effect

KW - SBT (SrBiTaO)

KW - Sol-gel process

KW - Thin film

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DO - 10.1143/jjap.39.2791

M3 - Article

AN - SCOPUS:0033702131

SN - 0021-4922

VL - 39

SP - 2791

EP - 2792

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 5 A

ER -

Pressure effect on the formation of ferroelectric SrBi₂Ta₂O₉ thin films

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