Preparation of As-doped p -type ZnO films using a Zn3 As2 ZnO target with pulsed laser deposition

We report the preparation of arsenic doped p -type ZnO films using a Zn3 As2 ZnO target by pulsed laser deposition. Zn3 As2 was used as a p -type dopant source material for arsenic doping in ZnO. The existence of As in the As-doped ZnO films was confirmed by the x-ray photoelectron spectroscopy study. The p -type behavior of the As-doped ZnO films was determined by the Hall and photoluminescence measurements. Room temperature Hall measurements revealed that the As-doped ZnO films exhibited p -type conductivity after being annealed at 200 °C in N2 ambient for 2 min with the hole concentrations varied between 2.48× 1017 and 1.18× 1018 cm-3. The resistivity and carrier mobility of the As-doped p -type ZnO films were in the range of 2.2-6.7 cm and 0.83-11.4 cm2 V s, respectively. The low temperature photoluminescence measurements confirmed the peak associated with the neutral-acceptor bound exciton (A0 X) emission in the As-doped p -type ZnO films.