Preparation and characterization of PZT thin films on RuOx/Pt multilayered electrode by MOCVD

Tae Young Kim; Daesig Kim; Chee Won Chung; June Key Lee; Inyong Song

Preparation and characterization of PZT thin films on RuOx/Pt multilayered electrode by MOCVD

Tae Young Kim, Daesig Kim, Chee Won Chung, June Key Lee, Inyong Song

Samsung

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Ferroelectric lead zirconate titanate (PZT) thin films have been successfully prepared on a RuOx/Pt multilayered electrode by Metal Organic Chemical Vapor Deposition (MOCVD). The multilayered electrode was introduced to enhance device reliability for FRAM and DRAM applications. The variations in the microstructure and ferroelectric properties of the PZT thin films were investigated as a function of substrate thickness. The microstructure of the PZT thin films was found to have a strong dependence on the surface morphology of the substrate. The control of microstructure resulted in improved ferroelectric properties. The endurance of the Pt/RuOx/PZT/RuOx/Pt capacitor was also maintained up to 10¹⁰ cycles without any serious degradation. The ferroelectric capacitors on 4 inches wafer were integrated by using Inductively Coupled Plasma Reactive Ion Etching (ICP RIE) system and the fully processed MOCVD PZT capacitors showed good ferroelectric properties (Vc = 0.57 V, Pr = 22 μC/cm² respectively).

Original language	English
Pages (from-to)	361-366
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	446
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: 2 Dec 1996 → 4 Dec 1996

Cite this

@article{0e5e8145b6ab458c85f9d5c0bbd32af0,

title = "Preparation and characterization of PZT thin films on RuOx/Pt multilayered electrode by MOCVD",

abstract = "Ferroelectric lead zirconate titanate (PZT) thin films have been successfully prepared on a RuOx/Pt multilayered electrode by Metal Organic Chemical Vapor Deposition (MOCVD). The multilayered electrode was introduced to enhance device reliability for FRAM and DRAM applications. The variations in the microstructure and ferroelectric properties of the PZT thin films were investigated as a function of substrate thickness. The microstructure of the PZT thin films was found to have a strong dependence on the surface morphology of the substrate. The control of microstructure resulted in improved ferroelectric properties. The endurance of the Pt/RuOx/PZT/RuOx/Pt capacitor was also maintained up to 1010 cycles without any serious degradation. The ferroelectric capacitors on 4 inches wafer were integrated by using Inductively Coupled Plasma Reactive Ion Etching (ICP RIE) system and the fully processed MOCVD PZT capacitors showed good ferroelectric properties (Vc = 0.57 V, Pr = 22 μC/cm2 respectively).",

author = "Kim, {Tae Young} and Daesig Kim and Chung, {Chee Won} and Lee, {June Key} and Inyong Song",

year = "1997",

language = "English",

volume = "446",

pages = "361--366",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Meeting ; Conference date: 02-12-1996 Through 04-12-1996",

}

TY - JOUR

T1 - Preparation and characterization of PZT thin films on RuOx/Pt multilayered electrode by MOCVD

AU - Kim, Tae Young

AU - Kim, Daesig

AU - Chung, Chee Won

AU - Lee, June Key

AU - Song, Inyong

PY - 1997

Y1 - 1997

N2 - Ferroelectric lead zirconate titanate (PZT) thin films have been successfully prepared on a RuOx/Pt multilayered electrode by Metal Organic Chemical Vapor Deposition (MOCVD). The multilayered electrode was introduced to enhance device reliability for FRAM and DRAM applications. The variations in the microstructure and ferroelectric properties of the PZT thin films were investigated as a function of substrate thickness. The microstructure of the PZT thin films was found to have a strong dependence on the surface morphology of the substrate. The control of microstructure resulted in improved ferroelectric properties. The endurance of the Pt/RuOx/PZT/RuOx/Pt capacitor was also maintained up to 1010 cycles without any serious degradation. The ferroelectric capacitors on 4 inches wafer were integrated by using Inductively Coupled Plasma Reactive Ion Etching (ICP RIE) system and the fully processed MOCVD PZT capacitors showed good ferroelectric properties (Vc = 0.57 V, Pr = 22 μC/cm2 respectively).

AB - Ferroelectric lead zirconate titanate (PZT) thin films have been successfully prepared on a RuOx/Pt multilayered electrode by Metal Organic Chemical Vapor Deposition (MOCVD). The multilayered electrode was introduced to enhance device reliability for FRAM and DRAM applications. The variations in the microstructure and ferroelectric properties of the PZT thin films were investigated as a function of substrate thickness. The microstructure of the PZT thin films was found to have a strong dependence on the surface morphology of the substrate. The control of microstructure resulted in improved ferroelectric properties. The endurance of the Pt/RuOx/PZT/RuOx/Pt capacitor was also maintained up to 1010 cycles without any serious degradation. The ferroelectric capacitors on 4 inches wafer were integrated by using Inductively Coupled Plasma Reactive Ion Etching (ICP RIE) system and the fully processed MOCVD PZT capacitors showed good ferroelectric properties (Vc = 0.57 V, Pr = 22 μC/cm2 respectively).

UR - http://www.scopus.com/inward/record.url?scp=0030648447&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030648447

SN - 0272-9172

VL - 446

SP - 361

EP - 366

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 2 December 1996 through 4 December 1996

ER -

Preparation and characterization of PZT thin films on RuOx/Pt multilayered electrode by MOCVD

Abstract

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