PowerStage MOSFETs-more power in less space

Devices that integrate the high-side and low-side MOSFET into a small single package are available to address the issues of integration and optimization. The designer can achieve low parasitic loop inductance in a compact and simplified layout for a DC/DC converter with the internal connection of high-side and low-side MOSFETs, reducing footprint area by 50% or more as compared to a design based on discrete MOSFETs. A range of PowerStage MOSFETs implement this approach for buck converter designs. These devices provide DC/DC conversion efficiency up to 93.5% in applications ranging from 0A to more than 30A, as they are based on Infineon's low R _DS(ON)25/30V OptiMOS™ technology. A MOSFET is also operated as the synchronous rectifier in reverse, utilizing the body diode of the MOSFET as commutation element during the dead time.