PMMA-based patternable gate insulators for organic thin-film transistors

Tae Gon Kim; Eun Hwan Jeong; Sang Chul Lim; Seong Hyun Kim; Gi Heon Kim; Seung Hyun Kim; Han Yong Jeon; Ji Ho Youk

doi:10.1016/j.synthmet.2008.11.027

PMMA-based patternable gate insulators for organic thin-film transistors

Tae Gon Kim, Eun Hwan Jeong, Sang Chul Lim, Seong Hyun Kim, Gi Heon Kim, Seung Hyun Kim, Han Yong Jeon, Ji Ho Youk

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

In order to prepare patternable polymer gate insulators, two methods of photo-crosslinking the polymer insulator were investigated. In the first method, poly(methyl methacrylate-co-2-hydroxyethyl methacrylate) [poly(MMA-co-HEMA)] functionalized with cinnamate groups was synthesized and photo-crosslinked. In the second method, a semi-interpenetrating PMMA network was prepared using a 25 wt% solution of PMMA/dipentaerythritol hexa-acrylate (DPEHA)/diphenyl(2,4,6-trimethylbenzoyl)phosphine oxide (TPO) by photo-crosslinking. Both of the photo-crosslinked insulator layers showed a high pattern resolution, indicating that physically and chemically stable crosslinking was accomplished. The field-effect mobilities of the pentacene-based OTFTs fabricated with the functionalized poly(MMA-co-HEMA) (60/40) and PMMA/DPEHA as gate insulators were 0.98 and 0.71 cm²/V s, respectively. It was found that patternable polymer gate insulators having good electrical properties could be prepared by using the functionalized poly(MMA-co-HEMA) and the PMMA/DPEHA solution.

Original language	English
Pages (from-to)	749-753
Number of pages	5
Journal	Synthetic Metals
Volume	159
Issue number	7-8
DOIs	https://doi.org/10.1016/j.synthmet.2008.11.027
State	Published - Apr 2009

Bibliographical note

Funding Information:
The authors of this study would like to thank the Korea Science and Engineering Foundation (KOSEF) for sponsoring this research through the SRC/ERC Program of MOST/KOSEF (R11-2005-065) and the Korean Ministry of Commerce, Industries & Energy (MOCIE).

Keywords

Micropatterning
OTFT
PMMA
Photo-crosslinking
Polymer gate insulator

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10.1016/j.synthmet.2008.11.027

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title = "PMMA-based patternable gate insulators for organic thin-film transistors",

abstract = "In order to prepare patternable polymer gate insulators, two methods of photo-crosslinking the polymer insulator were investigated. In the first method, poly(methyl methacrylate-co-2-hydroxyethyl methacrylate) [poly(MMA-co-HEMA)] functionalized with cinnamate groups was synthesized and photo-crosslinked. In the second method, a semi-interpenetrating PMMA network was prepared using a 25 wt% solution of PMMA/dipentaerythritol hexa-acrylate (DPEHA)/diphenyl(2,4,6-trimethylbenzoyl)phosphine oxide (TPO) by photo-crosslinking. Both of the photo-crosslinked insulator layers showed a high pattern resolution, indicating that physically and chemically stable crosslinking was accomplished. The field-effect mobilities of the pentacene-based OTFTs fabricated with the functionalized poly(MMA-co-HEMA) (60/40) and PMMA/DPEHA as gate insulators were 0.98 and 0.71 cm2/V s, respectively. It was found that patternable polymer gate insulators having good electrical properties could be prepared by using the functionalized poly(MMA-co-HEMA) and the PMMA/DPEHA solution.",

keywords = "Micropatterning, OTFT, PMMA, Photo-crosslinking, Polymer gate insulator",

author = "Kim, {Tae Gon} and Jeong, {Eun Hwan} and Lim, {Sang Chul} and Kim, {Seong Hyun} and Kim, {Gi Heon} and Kim, {Seung Hyun} and Jeon, {Han Yong} and Youk, {Ji Ho}",

note = "Funding Information: The authors of this study would like to thank the Korea Science and Engineering Foundation (KOSEF) for sponsoring this research through the SRC/ERC Program of MOST/KOSEF (R11-2005-065) and the Korean Ministry of Commerce, Industries & Energy (MOCIE).",

year = "2009",

month = apr,

doi = "10.1016/j.synthmet.2008.11.027",

language = "English",

volume = "159",

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AU - Kim, Tae Gon

AU - Jeong, Eun Hwan

AU - Lim, Sang Chul

AU - Kim, Seong Hyun

AU - Kim, Gi Heon

AU - Kim, Seung Hyun

AU - Jeon, Han Yong

AU - Youk, Ji Ho

N1 - Funding Information: The authors of this study would like to thank the Korea Science and Engineering Foundation (KOSEF) for sponsoring this research through the SRC/ERC Program of MOST/KOSEF (R11-2005-065) and the Korean Ministry of Commerce, Industries & Energy (MOCIE).

PY - 2009/4

Y1 - 2009/4

N2 - In order to prepare patternable polymer gate insulators, two methods of photo-crosslinking the polymer insulator were investigated. In the first method, poly(methyl methacrylate-co-2-hydroxyethyl methacrylate) [poly(MMA-co-HEMA)] functionalized with cinnamate groups was synthesized and photo-crosslinked. In the second method, a semi-interpenetrating PMMA network was prepared using a 25 wt% solution of PMMA/dipentaerythritol hexa-acrylate (DPEHA)/diphenyl(2,4,6-trimethylbenzoyl)phosphine oxide (TPO) by photo-crosslinking. Both of the photo-crosslinked insulator layers showed a high pattern resolution, indicating that physically and chemically stable crosslinking was accomplished. The field-effect mobilities of the pentacene-based OTFTs fabricated with the functionalized poly(MMA-co-HEMA) (60/40) and PMMA/DPEHA as gate insulators were 0.98 and 0.71 cm2/V s, respectively. It was found that patternable polymer gate insulators having good electrical properties could be prepared by using the functionalized poly(MMA-co-HEMA) and the PMMA/DPEHA solution.

AB - In order to prepare patternable polymer gate insulators, two methods of photo-crosslinking the polymer insulator were investigated. In the first method, poly(methyl methacrylate-co-2-hydroxyethyl methacrylate) [poly(MMA-co-HEMA)] functionalized with cinnamate groups was synthesized and photo-crosslinked. In the second method, a semi-interpenetrating PMMA network was prepared using a 25 wt% solution of PMMA/dipentaerythritol hexa-acrylate (DPEHA)/diphenyl(2,4,6-trimethylbenzoyl)phosphine oxide (TPO) by photo-crosslinking. Both of the photo-crosslinked insulator layers showed a high pattern resolution, indicating that physically and chemically stable crosslinking was accomplished. The field-effect mobilities of the pentacene-based OTFTs fabricated with the functionalized poly(MMA-co-HEMA) (60/40) and PMMA/DPEHA as gate insulators were 0.98 and 0.71 cm2/V s, respectively. It was found that patternable polymer gate insulators having good electrical properties could be prepared by using the functionalized poly(MMA-co-HEMA) and the PMMA/DPEHA solution.

KW - Micropatterning

KW - OTFT

KW - PMMA

KW - Photo-crosslinking

KW - Polymer gate insulator

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DO - 10.1016/j.synthmet.2008.11.027

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SN - 0379-6779

VL - 159

SP - 749

EP - 753

JO - Synthetic Metals

JF - Synthetic Metals

IS - 7-8

ER -

PMMA-based patternable gate insulators for organic thin-film transistors

Abstract

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Keywords

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