TY - GEN
T1 - Photoluminescence characteristics of GaN nanoparticles
AU - Chen, Y.
AU - Kang, K. S.
AU - Jyoti, N.
AU - Kim, Jaehwan
PY - 2010
Y1 - 2010
N2 - GaN nanoparticles have been fabricated with sol-gel method using Ga(NO 3)3 as a presusor, HNO3 as a solvent, NH 3OH as a pH adjusting agent, and citric acid as a chelating agent. After adding citric acid the solution became clear. The solution was poured to Petri dish and dried at 400 °C for 4 h. The resulting Ga2O 3 was gray colored powder. The gallium oxide power was put to the Al-crucible and annealed at 900 °C for 1 h. The resulting nanoparticles have been investigated using energy dispersive spectroscopy (EDS), x-ray diffeactometer, transmission electron microscopy (TEM), and fluorometer. The TEM images show that the GaN nanoparticle size was approximately 8-13 nm. X-ray diffraction patterns provide characteristic GaN diffraction peaks. There are two sharp photoluminescence (PL) peaks centered at 371 nm and 483 nm and broad PL peak between 400-600 nm.
AB - GaN nanoparticles have been fabricated with sol-gel method using Ga(NO 3)3 as a presusor, HNO3 as a solvent, NH 3OH as a pH adjusting agent, and citric acid as a chelating agent. After adding citric acid the solution became clear. The solution was poured to Petri dish and dried at 400 °C for 4 h. The resulting Ga2O 3 was gray colored powder. The gallium oxide power was put to the Al-crucible and annealed at 900 °C for 1 h. The resulting nanoparticles have been investigated using energy dispersive spectroscopy (EDS), x-ray diffeactometer, transmission electron microscopy (TEM), and fluorometer. The TEM images show that the GaN nanoparticle size was approximately 8-13 nm. X-ray diffraction patterns provide characteristic GaN diffraction peaks. There are two sharp photoluminescence (PL) peaks centered at 371 nm and 483 nm and broad PL peak between 400-600 nm.
UR - http://www.scopus.com/inward/record.url?scp=78049434749&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:78049434749
SN - 9781439834015
T3 - Nanotechnology 2010: Advanced Materials, CNTs, Particles, Films and Composites - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010
SP - 469
EP - 474
BT - Nanotechnology 2010
T2 - Nanotechnology 2010: Advanced Materials, CNTs, Particles, Films and Composites - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010
Y2 - 21 June 2010 through 24 June 2010
ER -