TY - GEN
T1 - Photolithographic patterning in supercritical carbon dioxide
T2 - Academic Track of the 2008 Flexible Electronics and Displays - Conference and Exhibition, FLEX
AU - Hwang, Ha Soo
AU - Zakhidov, Alexander
AU - Lee, Jin Kyun
AU - DeFranco, John A.
AU - Fong, Hon Hang
AU - Malliaras, George G.
AU - Ober, Christopher K.
PY - 2008
Y1 - 2008
N2 - Photolithography is a high-throughput, cost-effective patterning technology. However, the application to organic electronic devices has been restricted because of its chemical compatibility issue with delicate organic materials. In this study we propose a new photolithography technique which utilizes supercritical carbon dioxide (scCO2) as an organic electronic materials-benign development solvent. Supercritical carbon dioxide is a fluid that exists above its critical pressure and temperature (P c=73.8 bar and Tc=31.1°C). Apart from the environmental advantages, useful process benefits result from the fact that most non-fluorinated organic materials are not damaged in contact with ScCO 2. A polymeric material composed of perfluorodecyl methacrylate (FDMA) and tert-butyl methacrylate (TBMA) was synthesized as a negative-tone photoresist, processible in ScCO2. Micron-sized resist patterns on a Si wafer were successfully processed under i-line (λ=365 nm) exposure conditions. The resist showed a capability to make patterns on the conductive poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) film. The resulting resist pattern was finally applied to fabricate patterned polymer light-emitting devices.
AB - Photolithography is a high-throughput, cost-effective patterning technology. However, the application to organic electronic devices has been restricted because of its chemical compatibility issue with delicate organic materials. In this study we propose a new photolithography technique which utilizes supercritical carbon dioxide (scCO2) as an organic electronic materials-benign development solvent. Supercritical carbon dioxide is a fluid that exists above its critical pressure and temperature (P c=73.8 bar and Tc=31.1°C). Apart from the environmental advantages, useful process benefits result from the fact that most non-fluorinated organic materials are not damaged in contact with ScCO 2. A polymeric material composed of perfluorodecyl methacrylate (FDMA) and tert-butyl methacrylate (TBMA) was synthesized as a negative-tone photoresist, processible in ScCO2. Micron-sized resist patterns on a Si wafer were successfully processed under i-line (λ=365 nm) exposure conditions. The resist showed a capability to make patterns on the conductive poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) film. The resulting resist pattern was finally applied to fabricate patterned polymer light-emitting devices.
KW - Additive patterning
KW - Electroluminescence (EL)
KW - Photolithography
KW - Subtractive patterning
KW - Supercritical carbon dioxide (scCO)
UR - http://www.scopus.com/inward/record.url?scp=49749146425&partnerID=8YFLogxK
U2 - 10.1109/FEDC.2008.4483878
DO - 10.1109/FEDC.2008.4483878
M3 - Conference contribution
AN - SCOPUS:49749146425
SN - 9781424420544
T3 - Proceedings of the Academic Track of the 2008 Flexible Electronics and Displays - Conference and Exhibition, FLEX
BT - Proceedings of the Academic Track of the 2008 Flexible Electronics and Displays - Conference and Exhibition, FLEX
Y2 - 21 January 2008 through 24 January 2008
ER -