TY - JOUR
T1 - Perovskite Pattern Formation by Chemical Vapor Deposition Using Photolithographically Defined Templates
AU - Kim, Geemin
AU - An, Sol
AU - Hyeong, Seok Ki
AU - Lee, Seoung Ki
AU - Kim, Myungwoong
AU - Shin, Naechul
N1 - Publisher Copyright:
© 2019 American Chemical Society.
PY - 2019/10/8
Y1 - 2019/10/8
N2 - Thin film fabrication is necessary to realize the device integration of organic-inorganic hybrid perovskites (OIHPs), and solution-based crystallization methods have been employed widely to this end. Despite the versatility of the solution approach, device fabrication using typical "top-down" lithography is generally incompatible with as-prepared OIHPs films because of the low stability of perovskites to polar solvents involved in the lithographic process. Moreover, solution-prepared perovskites usually exhibit irregular surface roughness, implying the existence of randomly oriented crystal domains with a large density of grain boundaries, which are ultimately detrimental to the material properties. Here, we report a patterning of CH3NH3PbI3 (MAPbI3) thin films using a photolithographically fabricated cross-linked copolymer template on Si or SiO2 substrates via a chemical vapor deposition (CVD) method. Perovskite patterning is accomplished by growing PbI2 precursor layers selectively on template patterns and subsequently converting to MAPbI3 using CH3NH3I (MAI) in the vapor phase. We confirm that [0001]-oriented PbI2 nanoplatelets nucleate primarily on a Si or SiO2 surface and grow by surface diffusion from a polymer surface. The MAPbI3 conversion process preserves the original pattern morphology through the vapor-solid intercalation of MAI. Prototype photodetector arrays based on MAPbI3 patterns are also demonstrated. Our results highlight the advantages of the CVD patterning of perovskite materials in large-scale production for a range of optoelectronic applications.
AB - Thin film fabrication is necessary to realize the device integration of organic-inorganic hybrid perovskites (OIHPs), and solution-based crystallization methods have been employed widely to this end. Despite the versatility of the solution approach, device fabrication using typical "top-down" lithography is generally incompatible with as-prepared OIHPs films because of the low stability of perovskites to polar solvents involved in the lithographic process. Moreover, solution-prepared perovskites usually exhibit irregular surface roughness, implying the existence of randomly oriented crystal domains with a large density of grain boundaries, which are ultimately detrimental to the material properties. Here, we report a patterning of CH3NH3PbI3 (MAPbI3) thin films using a photolithographically fabricated cross-linked copolymer template on Si or SiO2 substrates via a chemical vapor deposition (CVD) method. Perovskite patterning is accomplished by growing PbI2 precursor layers selectively on template patterns and subsequently converting to MAPbI3 using CH3NH3I (MAI) in the vapor phase. We confirm that [0001]-oriented PbI2 nanoplatelets nucleate primarily on a Si or SiO2 surface and grow by surface diffusion from a polymer surface. The MAPbI3 conversion process preserves the original pattern morphology through the vapor-solid intercalation of MAI. Prototype photodetector arrays based on MAPbI3 patterns are also demonstrated. Our results highlight the advantages of the CVD patterning of perovskite materials in large-scale production for a range of optoelectronic applications.
UR - http://www.scopus.com/inward/record.url?scp=85073418275&partnerID=8YFLogxK
U2 - 10.1021/acs.chemmater.9b03155
DO - 10.1021/acs.chemmater.9b03155
M3 - Article
AN - SCOPUS:85073418275
SN - 0897-4756
VL - 31
SP - 8212
EP - 8221
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 19
ER -