Performance Improvement of p-Channel Tin Monoxide Transistors with a Solution-Processed Zirconium Oxide Gate Dielectric

Azida Azmi; Jiwon Lee; Tae Jung Gim; Rino Choi; Jae Kyeong Jeong

doi:10.1109/LED.2017.2758349

Performance Improvement of p-Channel Tin Monoxide Transistors with a Solution-Processed Zirconium Oxide Gate Dielectric

Azida Azmi
, Jiwon Lee
, Tae Jung Gim
, Rino Choi
, Jae Kyeong Jeong

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

This letter reports the fabrication of p-channel tin monoxide (SnO) thin-film transistors (TFTs) with a high-permittivity zirconium oxide (ZrO₂) gate insulator film, which were prepared by a low-cost spin-cast method. The spin-cast ZrO₂ dielectrics exhibit a low leakage current density of 4.5 × 10^-8 A/cm² at 1 MV/cm. Introducing the ZrO₂ dielectric in top-type SnO TFTs allows for a reduction in the driving gate voltage range from 80 to 10 V, as compared with devices with a thermal SiO₂ gate insulator. Additionally, a high field-effect mobility of 2.5 cm²/Vs and an I_ON/OFF of 3 × 10³ were preserved.

Original language	English
Article number	8055568
Pages (from-to)	1543-1546
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	38
Issue number	11
DOIs	https://doi.org/10.1109/LED.2017.2758349
State	Published - Nov 2017

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

Keywords

p-type semiconductor
spin cast
thin-film transistors
tin monoxide
ZrO gate dielectric

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10.1109/LED.2017.2758349

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title = "Performance Improvement of p-Channel Tin Monoxide Transistors with a Solution-Processed Zirconium Oxide Gate Dielectric",

abstract = "This letter reports the fabrication of p-channel tin monoxide (SnO) thin-film transistors (TFTs) with a high-permittivity zirconium oxide (ZrO2) gate insulator film, which were prepared by a low-cost spin-cast method. The spin-cast ZrO2 dielectrics exhibit a low leakage current density of 4.5 × 10-8 A/cm2 at 1 MV/cm. Introducing the ZrO2 dielectric in top-type SnO TFTs allows for a reduction in the driving gate voltage range from 80 to 10 V, as compared with devices with a thermal SiO2 gate insulator. Additionally, a high field-effect mobility of 2.5 cm2/Vs and an ION/OFF of 3 × 103 were preserved.",

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author = "Azida Azmi and Jiwon Lee and Gim, \{Tae Jung\} and Rino Choi and Jeong, \{Jae Kyeong\}",

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AU - Azmi, Azida

AU - Lee, Jiwon

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AU - Jeong, Jae Kyeong

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KW - thin-film transistors

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KW - ZrO gate dielectric

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DO - 10.1109/LED.2017.2758349

M3 - Article

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Performance Improvement of p-Channel Tin Monoxide Transistors with a Solution-Processed Zirconium Oxide Gate Dielectric

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