Abstract
Silk fibroin (SF) has attracted interest as a gate dielectric due to its electrical insulation and high mobility in pentacene based organic thin film transistors (OTFTs). In this research, the surface energy of SF is controlled by water annealing, ethanol, and methanol solution treatments in order to study the effect of pentacene morphology on SF thin films with various treatments. For different crystallization methods, the crystal structures and surface energies of SF were investigated in detail by FT-IR and contact angle. Methanol treated SF thin film has a lower surface energy than the other two thin films. Topologies of pentacene on the SF thin films with various surface energies were obtained by atomic force microscopy (AFM). The AFM results showed that the smallest grain size of pentacene was that on methanol treated SF thin film which demonstrated that methanol treated SF thin film can be a proper candidate for a gate dielectric in OTFTs.
Original language | English |
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Pages (from-to) | 2006-2009 |
Number of pages | 4 |
Journal | Fibers and Polymers |
Volume | 14 |
Issue number | 12 |
DOIs | |
State | Published - Dec 2013 |
Bibliographical note
Funding Information:This study was supported by a grant (#10041220) from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea, and by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2013R1A1A2A10008534).
Keywords
- Crystallization
- Dielectric property
- Gate dielectric
- Pentacene
- Silk fibroin