Oxide-apertured photodetector integrated on vertical cavity surface emitting laser

I. Y. Han; J. H. Ser; H. Y. Ryu; Y. H. Lee

doi:10.1049/el:19991178

Oxide-apertured photodetector integrated on vertical cavity surface emitting laser

I. Y. Han, J. H. Ser, H. Y. Ryu, Y. H. Lee

Korea Advanced Institute of Science and Technology

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Abstract

The authors have designed and fabricated oxide-apertured photodetectors integrated with vertical cavity surface emitting lasers (VCSELs). The photocurrent originating from spontaneous emission is suppressed by more than a factor of 10 in this integrated photodetector owing to the use of nonradiative recombination at the GaAs/oxide interface. In addition, the unavoidable internal loss from the detector is minimised by locating the GaAs detection layer as far as possible from the VCSEL cavity.

Original language	English
Pages (from-to)	1742-1743
Number of pages	2
Journal	Electronics Letters
Volume	35
Issue number	20
DOIs	https://doi.org/10.1049/el:19991178
State	Published - 1999
Externally published	Yes

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title = "Oxide-apertured photodetector integrated on vertical cavity surface emitting laser",

abstract = "The authors have designed and fabricated oxide-apertured photodetectors integrated with vertical cavity surface emitting lasers (VCSELs). The photocurrent originating from spontaneous emission is suppressed by more than a factor of 10 in this integrated photodetector owing to the use of nonradiative recombination at the GaAs/oxide interface. In addition, the unavoidable internal loss from the detector is minimised by locating the GaAs detection layer as far as possible from the VCSEL cavity.",

author = "Han, {I. Y.} and Ser, {J. H.} and Ryu, {H. Y.} and Lee, {Y. H.}",

year = "1999",

doi = "10.1049/el:19991178",

language = "English",

volume = "35",

pages = "1742--1743",

journal = "Electronics Letters",

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AU - Han, I. Y.

AU - Ser, J. H.

AU - Ryu, H. Y.

AU - Lee, Y. H.

PY - 1999

Y1 - 1999

N2 - The authors have designed and fabricated oxide-apertured photodetectors integrated with vertical cavity surface emitting lasers (VCSELs). The photocurrent originating from spontaneous emission is suppressed by more than a factor of 10 in this integrated photodetector owing to the use of nonradiative recombination at the GaAs/oxide interface. In addition, the unavoidable internal loss from the detector is minimised by locating the GaAs detection layer as far as possible from the VCSEL cavity.

AB - The authors have designed and fabricated oxide-apertured photodetectors integrated with vertical cavity surface emitting lasers (VCSELs). The photocurrent originating from spontaneous emission is suppressed by more than a factor of 10 in this integrated photodetector owing to the use of nonradiative recombination at the GaAs/oxide interface. In addition, the unavoidable internal loss from the detector is minimised by locating the GaAs detection layer as far as possible from the VCSEL cavity.

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DO - 10.1049/el:19991178

M3 - Article

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VL - 35

SP - 1742

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JO - Electronics Letters

JF - Electronics Letters

IS - 20

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Oxide-apertured photodetector integrated on vertical cavity surface emitting laser

Abstract

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