Multi-threshold voltages in ultra thin-body devices by asymmetric dual-gate structure

Hyungjin Kim; Jungjin Park; Min Woo Kwon; Sungmin Hwang; Byung Gook Park

doi:10.7567/JJAP.55.04ED01

Multi-threshold voltages in ultra thin-body devices by asymmetric dual-gate structure

Hyungjin Kim, Jungjin Park, Min Woo Kwon, Sungmin Hwang, Byung Gook Park

Seoul National University

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Control of threshold voltage (VT) by asymmetric dual-gate structure is investigated. Two separated gates are successfully fabricated through twostep chemical mechanical polishing (CMP) processes. Silicon fin width is determined as same as the thickness of oxide sidewall spacer. VT of the device is modulated by how many charges are trapped in the nitride layer of the second gate stack (G2) through applying programming pulses to G2. They affect the formation of electron channel on the first gate (G1) side. Additionally, the efficiency of this technique is analyzed by simple capacitance network. The thinner body is the more effective the proposed VT control method is. It is noteworthy that this method can be used without ultra thin buried oxide (BOX) structure and additional biasing scheme.

Original language	English
Article number	04ED01
Journal	Japanese Journal of Applied Physics
Volume	55
Issue number	4
DOIs	https://doi.org/10.7567/JJAP.55.04ED01
State	Published - Apr 2016
Externally published	Yes

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Publisher Copyright:
© 2016 The Japan Society of Applied Physics.

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title = "Multi-threshold voltages in ultra thin-body devices by asymmetric dual-gate structure",

abstract = "Control of threshold voltage (VT) by asymmetric dual-gate structure is investigated. Two separated gates are successfully fabricated through twostep chemical mechanical polishing (CMP) processes. Silicon fin width is determined as same as the thickness of oxide sidewall spacer. VT of the device is modulated by how many charges are trapped in the nitride layer of the second gate stack (G2) through applying programming pulses to G2. They affect the formation of electron channel on the first gate (G1) side. Additionally, the efficiency of this technique is analyzed by simple capacitance network. The thinner body is the more effective the proposed VT control method is. It is noteworthy that this method can be used without ultra thin buried oxide (BOX) structure and additional biasing scheme.",

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AU - Kim, Hyungjin

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AU - Kwon, Min Woo

AU - Hwang, Sungmin

AU - Park, Byung Gook

PY - 2016/4

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N2 - Control of threshold voltage (VT) by asymmetric dual-gate structure is investigated. Two separated gates are successfully fabricated through twostep chemical mechanical polishing (CMP) processes. Silicon fin width is determined as same as the thickness of oxide sidewall spacer. VT of the device is modulated by how many charges are trapped in the nitride layer of the second gate stack (G2) through applying programming pulses to G2. They affect the formation of electron channel on the first gate (G1) side. Additionally, the efficiency of this technique is analyzed by simple capacitance network. The thinner body is the more effective the proposed VT control method is. It is noteworthy that this method can be used without ultra thin buried oxide (BOX) structure and additional biasing scheme.

AB - Control of threshold voltage (VT) by asymmetric dual-gate structure is investigated. Two separated gates are successfully fabricated through twostep chemical mechanical polishing (CMP) processes. Silicon fin width is determined as same as the thickness of oxide sidewall spacer. VT of the device is modulated by how many charges are trapped in the nitride layer of the second gate stack (G2) through applying programming pulses to G2. They affect the formation of electron channel on the first gate (G1) side. Additionally, the efficiency of this technique is analyzed by simple capacitance network. The thinner body is the more effective the proposed VT control method is. It is noteworthy that this method can be used without ultra thin buried oxide (BOX) structure and additional biasing scheme.

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JO - Japanese Journal of Applied Physics

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Multi-threshold voltages in ultra thin-body devices by asymmetric dual-gate structure

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