Modulation of hole-injection in GaInN-light emitting triodes and its effect on carrier recombination behavior

Sunyong Hwang, Dong Yeong Kim, Jun Hyuk Park, Han Youl Ryu, Jong Kyu Kim

Research output: Contribution to journalArticlepeer-review

Abstract

The effects of the hole injection modulated by using a three-terminal GaInN-based light emitter, light-emitting triode (LET), on carrier recombination behavior and efficiency droop are investigated. It was found that the lateral electric field created by applying voltage bias between the two anodes effectively reduces efficiency droop as well as dynamic conductance of LETs. Detailed analyses of LETs under various operation conditions by APSYS simulations reveal that the asymmetry in carrier transport between electrons and holes is alleviated by promoted injection of hot holes over the potential barrier, increasing the hole concentration as well as the radiative recombination rate in the multiple quantum well active region.

Original languageEnglish
Article number107104
JournalAIP Advances
Volume5
Issue number10
DOIs
StatePublished - 1 Oct 2015

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© 2015 Author(s).

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