Melt blown fiber-assisted solvent-free device fabrication at low-temperature

In this paper, we propose a solvent-free device fabrication method using a melt-blown (MB) fiber to minimize potential chemical and thermal damages to transition-metal-dichalcogenides (TMDCs)-based semiconductor channel. The fabrication process is composed of three steps; (1) MB fibers alignment as a shadow mask, (2) metal deposition, and (3) lifting-up MB fibers. The resulting WSe₂-based p-type metal-oxide-semiconductor (PMOS) device shows an ON/OFF current ratio of ~2 × 10⁵ (ON current of ~−40 µA) and a remarkable linear hole mobility of ~205 cm²/V·s at a drain voltage of −0.1 V. These results can be a strong evidence supporting that this MB fiber-assisted device fabrication can effectively suppress materials damage by minimizing chemical and thermal exposures. Followed by an MoS₂-based n-type MOS (NMOS) device demonstration, a complementary MOS (CMOS) inverter circuit application was successfully implemented, consisted of an MoS₂ NMOS and a WSe₂ PMOS as a load and a driver transistor, respectively. This MB fiber-based device fabrication can be a promising method for future electronics based on chemically reactive or thermally vulnerable materials.