Mechanism of electron trapping and characteristics of traps in HfO 2 gate stacks

Gennadi Bersuker; J. H. Sim; Chang Seo Park; Chadwin D. Young; Suvid V. Nadkarni; Rino Choi; Byoung Hun Lee

doi:10.1109/TDMR.2007.897532

Mechanism of electron trapping and characteristics of traps in HfO ₂ gate stacks

Gennadi Bersuker, J. H. Sim, Chang Seo Park, Chadwin D. Young, Suvid V. Nadkarni, Rino Choi, Byoung Hun Lee

Research output: Contribution to journal › Article › peer-review

141 Scopus citations

Abstract

Electron trapping in high-κ gate dielectrics under constant voltage stress is investigated. It is suggested that the electron trapping occurs through a two-step process: resonant tunneling of the injected electron into the preexisting defects (fast trapping) and thermally activated migration of trapped electrons to unoccupied traps (slow trapping). Characteristics of the electron traps extracted based on the proposed model are in good agreement with the calculated properties of the negatively charged oxygen vacancies. The model successfully describes low-temperature threshold voltage instability in NMOS transistors with HfO₂/TiN gate stacks.

Original language	English
Pages (from-to)	138-145
Number of pages	8
Journal	IEEE Transactions on Device and Materials Reliability
Volume	7
Issue number	1
DOIs	https://doi.org/10.1109/TDMR.2007.897532
State	Published - Mar 2007
Externally published	Yes

Keywords

Electron trapping
High-κ dielectrics
Threshold voltage instability

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10.1109/TDMR.2007.897532

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abstract = "Electron trapping in high-κ gate dielectrics under constant voltage stress is investigated. It is suggested that the electron trapping occurs through a two-step process: resonant tunneling of the injected electron into the preexisting defects (fast trapping) and thermally activated migration of trapped electrons to unoccupied traps (slow trapping). Characteristics of the electron traps extracted based on the proposed model are in good agreement with the calculated properties of the negatively charged oxygen vacancies. The model successfully describes low-temperature threshold voltage instability in NMOS transistors with HfO2/TiN gate stacks.",

keywords = "Electron trapping, High-κ dielectrics, Threshold voltage instability",

author = "Gennadi Bersuker and Sim, \{J. H.\} and Park, \{Chang Seo\} and Young, \{Chadwin D.\} and Nadkarni, \{Suvid V.\} and Rino Choi and Lee, \{Byoung Hun\}",

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AU - Bersuker, Gennadi

AU - Sim, J. H.

AU - Park, Chang Seo

AU - Young, Chadwin D.

AU - Nadkarni, Suvid V.

AU - Choi, Rino

AU - Lee, Byoung Hun

PY - 2007/3

Y1 - 2007/3

N2 - Electron trapping in high-κ gate dielectrics under constant voltage stress is investigated. It is suggested that the electron trapping occurs through a two-step process: resonant tunneling of the injected electron into the preexisting defects (fast trapping) and thermally activated migration of trapped electrons to unoccupied traps (slow trapping). Characteristics of the electron traps extracted based on the proposed model are in good agreement with the calculated properties of the negatively charged oxygen vacancies. The model successfully describes low-temperature threshold voltage instability in NMOS transistors with HfO2/TiN gate stacks.

AB - Electron trapping in high-κ gate dielectrics under constant voltage stress is investigated. It is suggested that the electron trapping occurs through a two-step process: resonant tunneling of the injected electron into the preexisting defects (fast trapping) and thermally activated migration of trapped electrons to unoccupied traps (slow trapping). Characteristics of the electron traps extracted based on the proposed model are in good agreement with the calculated properties of the negatively charged oxygen vacancies. The model successfully describes low-temperature threshold voltage instability in NMOS transistors with HfO2/TiN gate stacks.

KW - Electron trapping

KW - High-κ dielectrics

KW - Threshold voltage instability

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JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

IS - 1

ER -

Mechanism of electron trapping and characteristics of traps in HfO ₂ gate stacks

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Keywords

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