Magnetron sputtering growth and characterization of single crystal ZnO thin films on Si using GaN interlayer

Il Soo Kim; Tae Hwan Kim; Sang Sub Kim; Cheul Ro Lee; Byung Teak Lee

doi:10.1016/j.jcrysgro.2006.11.233

Magnetron sputtering growth and characterization of single crystal ZnO thin films on Si using GaN interlayer

Il Soo Kim, Tae Hwan Kim, Sang Sub Kim, Cheul Ro Lee, Byung Teak Lee

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

It is demonstrated that single crystal ZnO films can be grown on Si (1 1 1) substrates using a GaN (0 0 0 1) interlayer, as confirmed by X-ray diffraction (XRD) and transmission electron microscopy observation. Photoluminescence spectra of the ZnO films exhibited sharp and intense emission with line width of 155 meV at room temperature and 29 meV at 12 K. High resolution XRD measurement showed (0 0 0 4) peak with full-width at half-maximum value of about 230 arcsec. These results are comparable with previously reported values from ZnO/Al₂O₃ films grown by metalorganic chemical vapor deposition and represent significant improvement over the characteristics of the ZnO films directly grown on Si.

Original language	English
Pages (from-to)	295-298
Number of pages	4
Journal	Journal of Crystal Growth
Volume	299
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.11.233
State	Published - 15 Feb 2007
Externally published	Yes

Keywords

A3. Sputter deposition
B1. GaN buffer
B1. ZnO

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10.1016/j.jcrysgro.2006.11.233

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title = "Magnetron sputtering growth and characterization of single crystal ZnO thin films on Si using GaN interlayer",

abstract = "It is demonstrated that single crystal ZnO films can be grown on Si (1 1 1) substrates using a GaN (0 0 0 1) interlayer, as confirmed by X-ray diffraction (XRD) and transmission electron microscopy observation. Photoluminescence spectra of the ZnO films exhibited sharp and intense emission with line width of 155 meV at room temperature and 29 meV at 12 K. High resolution XRD measurement showed (0 0 0 4) peak with full-width at half-maximum value of about 230 arcsec. These results are comparable with previously reported values from ZnO/Al2O3 films grown by metalorganic chemical vapor deposition and represent significant improvement over the characteristics of the ZnO films directly grown on Si.",

keywords = "A3. Sputter deposition, B1. GaN buffer, B1. ZnO",

author = "Kim, {Il Soo} and Kim, {Tae Hwan} and Kim, {Sang Sub} and Lee, {Cheul Ro} and Lee, {Byung Teak}",

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doi = "10.1016/j.jcrysgro.2006.11.233",

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T1 - Magnetron sputtering growth and characterization of single crystal ZnO thin films on Si using GaN interlayer

AU - Kim, Il Soo

AU - Kim, Tae Hwan

AU - Kim, Sang Sub

AU - Lee, Cheul Ro

AU - Lee, Byung Teak

PY - 2007/2/15

Y1 - 2007/2/15

N2 - It is demonstrated that single crystal ZnO films can be grown on Si (1 1 1) substrates using a GaN (0 0 0 1) interlayer, as confirmed by X-ray diffraction (XRD) and transmission electron microscopy observation. Photoluminescence spectra of the ZnO films exhibited sharp and intense emission with line width of 155 meV at room temperature and 29 meV at 12 K. High resolution XRD measurement showed (0 0 0 4) peak with full-width at half-maximum value of about 230 arcsec. These results are comparable with previously reported values from ZnO/Al2O3 films grown by metalorganic chemical vapor deposition and represent significant improvement over the characteristics of the ZnO films directly grown on Si.

AB - It is demonstrated that single crystal ZnO films can be grown on Si (1 1 1) substrates using a GaN (0 0 0 1) interlayer, as confirmed by X-ray diffraction (XRD) and transmission electron microscopy observation. Photoluminescence spectra of the ZnO films exhibited sharp and intense emission with line width of 155 meV at room temperature and 29 meV at 12 K. High resolution XRD measurement showed (0 0 0 4) peak with full-width at half-maximum value of about 230 arcsec. These results are comparable with previously reported values from ZnO/Al2O3 films grown by metalorganic chemical vapor deposition and represent significant improvement over the characteristics of the ZnO films directly grown on Si.

KW - A3. Sputter deposition

KW - B1. GaN buffer

KW - B1. ZnO

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DO - 10.1016/j.jcrysgro.2006.11.233

M3 - Article

AN - SCOPUS:33846815121

SN - 0022-0248

VL - 299

SP - 295

EP - 298

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2

ER -

Magnetron sputtering growth and characterization of single crystal ZnO thin films on Si using GaN interlayer

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Keywords

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