Magnetron sputtering growth and characterization of high quality single crystal ZnO thin films on sapphire substrates

Il Soo Kim; Sang Hun Jeong; Sang Sub Kim; Byung Teak Lee

doi:10.1088/0268-1242/19/3/L06

Magnetron sputtering growth and characterization of high quality single crystal ZnO thin films on sapphire substrates

Il Soo Kim, Sang Hun Jeong, Sang Sub Kim, Byung Teak Lee

Chonnam National University

Research output: Contribution to journal › Letter › peer-review

47 Scopus citations

Abstract

ZnO films were grown on sapphire substrates by rf magnetron sputtering and their structural and optical properties were characterized in detail. It was observed that high quality single crystal ZnO films are obtained when grown at high temperature (>600°C) and low plasma power in oxygen-rich ambient. Films grown at 800°C and 75 W in pure O₂ showed sharp and intense photoluminescence (PL) and high resolution x-ray diffraction (XRD) peaks, with full-width-at-half-maximum values of 155 meV (room temperature PL), 23 meV (12 K PL) and 280 arcsec (XRD), which is comparable with previously reported values from ZnO films grown by more sophisticated techniques such as metal-organic chemical vapour deposition.

Original language	English
Pages (from-to)	L29-L31
Journal	Semiconductor Science and Technology
Volume	19
Issue number	3
DOIs	https://doi.org/10.1088/0268-1242/19/3/L06
State	Published - Mar 2004
Externally published	Yes

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title = "Magnetron sputtering growth and characterization of high quality single crystal ZnO thin films on sapphire substrates",

abstract = "ZnO films were grown on sapphire substrates by rf magnetron sputtering and their structural and optical properties were characterized in detail. It was observed that high quality single crystal ZnO films are obtained when grown at high temperature (>600°C) and low plasma power in oxygen-rich ambient. Films grown at 800°C and 75 W in pure O2 showed sharp and intense photoluminescence (PL) and high resolution x-ray diffraction (XRD) peaks, with full-width-at-half-maximum values of 155 meV (room temperature PL), 23 meV (12 K PL) and 280 arcsec (XRD), which is comparable with previously reported values from ZnO films grown by more sophisticated techniques such as metal-organic chemical vapour deposition.",

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T1 - Magnetron sputtering growth and characterization of high quality single crystal ZnO thin films on sapphire substrates

AU - Kim, Il Soo

AU - Jeong, Sang Hun

AU - Kim, Sang Sub

AU - Lee, Byung Teak

PY - 2004/3

Y1 - 2004/3

N2 - ZnO films were grown on sapphire substrates by rf magnetron sputtering and their structural and optical properties were characterized in detail. It was observed that high quality single crystal ZnO films are obtained when grown at high temperature (>600°C) and low plasma power in oxygen-rich ambient. Films grown at 800°C and 75 W in pure O2 showed sharp and intense photoluminescence (PL) and high resolution x-ray diffraction (XRD) peaks, with full-width-at-half-maximum values of 155 meV (room temperature PL), 23 meV (12 K PL) and 280 arcsec (XRD), which is comparable with previously reported values from ZnO films grown by more sophisticated techniques such as metal-organic chemical vapour deposition.

AB - ZnO films were grown on sapphire substrates by rf magnetron sputtering and their structural and optical properties were characterized in detail. It was observed that high quality single crystal ZnO films are obtained when grown at high temperature (>600°C) and low plasma power in oxygen-rich ambient. Films grown at 800°C and 75 W in pure O2 showed sharp and intense photoluminescence (PL) and high resolution x-ray diffraction (XRD) peaks, with full-width-at-half-maximum values of 155 meV (room temperature PL), 23 meV (12 K PL) and 280 arcsec (XRD), which is comparable with previously reported values from ZnO films grown by more sophisticated techniques such as metal-organic chemical vapour deposition.

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DO - 10.1088/0268-1242/19/3/L06

M3 - Letter

AN - SCOPUS:1642416684

SN - 0268-1242

VL - 19

SP - L29-L31

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 3

ER -

Magnetron sputtering growth and characterization of high quality single crystal ZnO thin films on sapphire substrates

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