Magnetic and electric properties of Ba-doped BiFeO3 epitaxial thin films prepared by pulsed laser deposition

Preetam Singh; K. D. Sung; Y. A. Park; N. Hur; J. H. Jung

doi:10.3938/jkps.55.609

Magnetic and electric properties of Ba-doped BiFeO₃ epitaxial thin films prepared by pulsed laser deposition

Preetam Singh, K. D. Sung, Y. A. Park, N. Hur, J. H. Jung

Inha University

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We report the structural, magnetic and electric properties of epitaxial Ba-doped BiFeO₃ (BBFO), i.e., Bi_0.75Ba _0.25FeO_3-δ, thin films grown on SrRuO ₃/SrTiO₃ (001) substrates by pulse laser deposition technique. At oxygen partial pressures of 500 mTorr and a substrate temperature of 600 °C, pure and epitaxial BBFO thin film is grown without any Fe ₂O₃ and Fe₃O₄ impurities. Ba ²⁺ doping in BiFeO₃ seems to induce a suppression of the antiferromagnetic spiral spin structure and the change of Fe-O-Fe bonding angle, in addition to the creation of oxygen vacancies. Hence, the BBFO film shows weak ferromagnetism, but a leaky dielectric behavior at room temperature. Thermally-activated hopping is found to be the main conduction mechanism in BBFO with an activation energy of 0.52 eV.

Original language	English
Pages (from-to)	609-612
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	55
Issue number	2
DOIs	https://doi.org/10.3938/jkps.55.609
State	Published - Aug 2009

Keywords

Epitaxial BiBaFeO thin film
Leaky dielectric
Weak ferromagnetism

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title = "Magnetic and electric properties of Ba-doped BiFeO3 epitaxial thin films prepared by pulsed laser deposition",

abstract = "We report the structural, magnetic and electric properties of epitaxial Ba-doped BiFeO3 (BBFO), i.e., Bi0.75Ba 0.25FeO3-δ, thin films grown on SrRuO 3/SrTiO3 (001) substrates by pulse laser deposition technique. At oxygen partial pressures of 500 mTorr and a substrate temperature of 600 °C, pure and epitaxial BBFO thin film is grown without any Fe 2O3 and Fe3O4 impurities. Ba 2+ doping in BiFeO3 seems to induce a suppression of the antiferromagnetic spiral spin structure and the change of Fe-O-Fe bonding angle, in addition to the creation of oxygen vacancies. Hence, the BBFO film shows weak ferromagnetism, but a leaky dielectric behavior at room temperature. Thermally-activated hopping is found to be the main conduction mechanism in BBFO with an activation energy of 0.52 eV.",

keywords = "Epitaxial BiBaFeO thin film, Leaky dielectric, Weak ferromagnetism",

author = "Preetam Singh and Sung, {K. D.} and Park, {Y. A.} and N. Hur and Jung, {J. H.}",

year = "2009",

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T1 - Magnetic and electric properties of Ba-doped BiFeO3 epitaxial thin films prepared by pulsed laser deposition

AU - Singh, Preetam

AU - Sung, K. D.

AU - Park, Y. A.

AU - Hur, N.

AU - Jung, J. H.

PY - 2009/8

Y1 - 2009/8

N2 - We report the structural, magnetic and electric properties of epitaxial Ba-doped BiFeO3 (BBFO), i.e., Bi0.75Ba 0.25FeO3-δ, thin films grown on SrRuO 3/SrTiO3 (001) substrates by pulse laser deposition technique. At oxygen partial pressures of 500 mTorr and a substrate temperature of 600 °C, pure and epitaxial BBFO thin film is grown without any Fe 2O3 and Fe3O4 impurities. Ba 2+ doping in BiFeO3 seems to induce a suppression of the antiferromagnetic spiral spin structure and the change of Fe-O-Fe bonding angle, in addition to the creation of oxygen vacancies. Hence, the BBFO film shows weak ferromagnetism, but a leaky dielectric behavior at room temperature. Thermally-activated hopping is found to be the main conduction mechanism in BBFO with an activation energy of 0.52 eV.

AB - We report the structural, magnetic and electric properties of epitaxial Ba-doped BiFeO3 (BBFO), i.e., Bi0.75Ba 0.25FeO3-δ, thin films grown on SrRuO 3/SrTiO3 (001) substrates by pulse laser deposition technique. At oxygen partial pressures of 500 mTorr and a substrate temperature of 600 °C, pure and epitaxial BBFO thin film is grown without any Fe 2O3 and Fe3O4 impurities. Ba 2+ doping in BiFeO3 seems to induce a suppression of the antiferromagnetic spiral spin structure and the change of Fe-O-Fe bonding angle, in addition to the creation of oxygen vacancies. Hence, the BBFO film shows weak ferromagnetism, but a leaky dielectric behavior at room temperature. Thermally-activated hopping is found to be the main conduction mechanism in BBFO with an activation energy of 0.52 eV.

KW - Epitaxial BiBaFeO thin film

KW - Leaky dielectric

KW - Weak ferromagnetism

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JO - Journal of the Korean Physical Society

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ER -

Magnetic and electric properties of Ba-doped BiFeO₃ epitaxial thin films prepared by pulsed laser deposition

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Keywords

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