LRS retention fail based on joule heating effect in InGaZnO resistive-switching random access memory

Jun Tae Jang; Geumho Ahn; Sung Jin Choi; Dong Myong Kim; Hyungjin Kim; Dae Hwan Kim

doi:10.35848/1882-0786/ab88c1

LRS retention fail based on joule heating effect in InGaZnO resistive-switching random access memory

Jun Tae Jang, Geumho Ahn, Sung Jin Choi, Dong Myong Kim, Hyungjin Kim, Dae Hwan Kim

Kookmin University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

This study reports the low-resistance state retention fail of InGaZnO resistive-switching random access memory (ReRAM) under constant DC bias stress conditions by Joule heating effect. There were the abrupt state changes of InGaZnO ReRAM devices with high voltage stress over 0.6 V because of thermal energy in conducting filament. In addition, SPICE simulation was conducted with verilog-A to verify this retention fail mechanism. We believe these results are potentially useful to the analysis on the retention fail properties of ReRAM devices as well as the system-level simulations with reliability-awareness.

Original language	English
Article number	054004
Journal	Applied Physics Express
Volume	13
Issue number	5
DOIs	https://doi.org/10.35848/1882-0786/ab88c1
State	Published - 1 May 2020

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© 2020 The Japan Society of Applied Physics.

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title = "LRS retention fail based on joule heating effect in InGaZnO resistive-switching random access memory",

abstract = "This study reports the low-resistance state retention fail of InGaZnO resistive-switching random access memory (ReRAM) under constant DC bias stress conditions by Joule heating effect. There were the abrupt state changes of InGaZnO ReRAM devices with high voltage stress over 0.6 V because of thermal energy in conducting filament. In addition, SPICE simulation was conducted with verilog-A to verify this retention fail mechanism. We believe these results are potentially useful to the analysis on the retention fail properties of ReRAM devices as well as the system-level simulations with reliability-awareness.",

author = "Jang, {Jun Tae} and Geumho Ahn and Choi, {Sung Jin} and Kim, {Dong Myong} and Hyungjin Kim and Kim, {Dae Hwan}",

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AU - Jang, Jun Tae

AU - Ahn, Geumho

AU - Choi, Sung Jin

AU - Kim, Dong Myong

AU - Kim, Hyungjin

AU - Kim, Dae Hwan

PY - 2020/5/1

Y1 - 2020/5/1

N2 - This study reports the low-resistance state retention fail of InGaZnO resistive-switching random access memory (ReRAM) under constant DC bias stress conditions by Joule heating effect. There were the abrupt state changes of InGaZnO ReRAM devices with high voltage stress over 0.6 V because of thermal energy in conducting filament. In addition, SPICE simulation was conducted with verilog-A to verify this retention fail mechanism. We believe these results are potentially useful to the analysis on the retention fail properties of ReRAM devices as well as the system-level simulations with reliability-awareness.

AB - This study reports the low-resistance state retention fail of InGaZnO resistive-switching random access memory (ReRAM) under constant DC bias stress conditions by Joule heating effect. There were the abrupt state changes of InGaZnO ReRAM devices with high voltage stress over 0.6 V because of thermal energy in conducting filament. In addition, SPICE simulation was conducted with verilog-A to verify this retention fail mechanism. We believe these results are potentially useful to the analysis on the retention fail properties of ReRAM devices as well as the system-level simulations with reliability-awareness.

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JO - Applied Physics Express

JF - Applied Physics Express

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ER -

LRS retention fail based on joule heating effect in InGaZnO resistive-switching random access memory

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