TY - JOUR
T1 - Local electronic structure of phosphorus-doped ZnO films investigated by X-ray absorption near-edge spectroscopy
AU - Vaithianathan, V.
AU - Asokan, K.
AU - Park, Jae Young
AU - Kim, Sang Sub
PY - 2009
Y1 - 2009
N2 - Using X-ray absorption near-edge structure spectroscopy (XANES), we investigate the local electronic structure of phosphorus (P) and its chemical valence in laser-ablated n-type (as-grown), and p-type (annealed) P-doped ZnO thin films. Both the P L 1- and P L 2,3-edge XANES spectra reveal that the valence state of P is 3- (P3-) in the p-type as well as in the n-type P-doped ZnO. However, the peak intensity is stronger in the former than that in the latter, suggesting that P replaces O (O2- sites with the P3-) after rapid thermal annealing. The Zn and O K-edges XANES spectra consistently demonstrate that, in the p-type state, P ions substitutionally occupy O sites in the ZnO lattice.
AB - Using X-ray absorption near-edge structure spectroscopy (XANES), we investigate the local electronic structure of phosphorus (P) and its chemical valence in laser-ablated n-type (as-grown), and p-type (annealed) P-doped ZnO thin films. Both the P L 1- and P L 2,3-edge XANES spectra reveal that the valence state of P is 3- (P3-) in the p-type as well as in the n-type P-doped ZnO. However, the peak intensity is stronger in the former than that in the latter, suggesting that P replaces O (O2- sites with the P3-) after rapid thermal annealing. The Zn and O K-edges XANES spectra consistently demonstrate that, in the p-type state, P ions substitutionally occupy O sites in the ZnO lattice.
UR - http://www.scopus.com/inward/record.url?scp=59749101828&partnerID=8YFLogxK
U2 - 10.1007/s00339-008-4883-6
DO - 10.1007/s00339-008-4883-6
M3 - Article
AN - SCOPUS:59749101828
SN - 0947-8396
VL - 94
SP - 995
EP - 998
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 4
ER -