Liquid delivery metal-organic chemical vapor deposition of Pb(Zr xTi1-x)O3 thin films for high-density ferroelectric random access memory application

June Key Lee; Moon Sook Lee; Sungho Hong; Wanin Lee; Yong Kyun Lee; Sangmin Shin; Youngsoo Park

doi:10.1143/JJAP.41.6690

Liquid delivery metal-organic chemical vapor deposition of Pb(Zr _xTi_1-x)O₃ thin films for high-density ferroelectric random access memory application

June Key Lee, Moon Sook Lee, Sungho Hong, Wanin Lee, Yong Kyun Lee, Sangmin Shin, Youngsoo Park

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

The growth characteristics of Pb(Zr_xTi_1-x)O ₃ (PZT) thin films were investigated for application to high-density ferroelectric random access memories (FeRAM) devices. Films were grown by the liquid source metal-organic chemical vapor deposition (LS-MOCVD) method with tmhd-family precursors, such as Pb(tmhd)₂, Zr(tmhd) ₂(OⁱPr)₂ and Ti(tmhd)₂(O ⁱPr)₂, dissolved in octane. Film deposition was mainly performed at 560°C, because it is the highest temperature at which bottom electrode contact could be maintained against oxidation in our capacitor over bit-line (COB) structure. The control of Pb precursor supply plays the most critical role in realizing a reliable process for PZT thin film deposition. We have monitored the changes in the microstructure and electrical properties of films on increasing the Pb precursor supply into the reaction chamber. Under optimized conditions, Ir/IrO₂/PZT(100 nm)/Ir capacitor shows well-saturated hysteresis loops with a remanent polarization (Pr) of ∼ 28 μC/cm² and coercive voltage of 0.8 V at 2.5 V.

Original language	English
Pages (from-to)	6690-6694
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	41
Issue number	11 B
DOIs	https://doi.org/10.1143/JJAP.41.6690
State	Published - Nov 2002

Keywords

COB
Capacitor
FeRAM
Ferroelectric
Hysteresis loop
Ir
Liquid delivery
MOCVD
PZT
Thin film

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title = "Liquid delivery metal-organic chemical vapor deposition of Pb(Zr xTi1-x)O3 thin films for high-density ferroelectric random access memory application",

abstract = "The growth characteristics of Pb(ZrxTi1-x)O 3 (PZT) thin films were investigated for application to high-density ferroelectric random access memories (FeRAM) devices. Films were grown by the liquid source metal-organic chemical vapor deposition (LS-MOCVD) method with tmhd-family precursors, such as Pb(tmhd)2, Zr(tmhd) 2(OiPr)2 and Ti(tmhd)2(O iPr)2, dissolved in octane. Film deposition was mainly performed at 560°C, because it is the highest temperature at which bottom electrode contact could be maintained against oxidation in our capacitor over bit-line (COB) structure. The control of Pb precursor supply plays the most critical role in realizing a reliable process for PZT thin film deposition. We have monitored the changes in the microstructure and electrical properties of films on increasing the Pb precursor supply into the reaction chamber. Under optimized conditions, Ir/IrO2/PZT(100 nm)/Ir capacitor shows well-saturated hysteresis loops with a remanent polarization (Pr) of ∼ 28 μC/cm2 and coercive voltage of 0.8 V at 2.5 V.",

keywords = "COB, Capacitor, FeRAM, Ferroelectric, Hysteresis loop, Ir, Liquid delivery, MOCVD, PZT, Thin film",

author = "Lee, {June Key} and Lee, {Moon Sook} and Sungho Hong and Wanin Lee and Lee, {Yong Kyun} and Sangmin Shin and Youngsoo Park",

year = "2002",

month = nov,

doi = "10.1143/JJAP.41.6690",

language = "English",

volume = "41",

pages = "6690--6694",

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publisher = "Japan Society of Applied Physics",

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AU - Lee, June Key

AU - Lee, Moon Sook

AU - Hong, Sungho

AU - Lee, Wanin

AU - Lee, Yong Kyun

AU - Shin, Sangmin

AU - Park, Youngsoo

PY - 2002/11

Y1 - 2002/11

N2 - The growth characteristics of Pb(ZrxTi1-x)O 3 (PZT) thin films were investigated for application to high-density ferroelectric random access memories (FeRAM) devices. Films were grown by the liquid source metal-organic chemical vapor deposition (LS-MOCVD) method with tmhd-family precursors, such as Pb(tmhd)2, Zr(tmhd) 2(OiPr)2 and Ti(tmhd)2(O iPr)2, dissolved in octane. Film deposition was mainly performed at 560°C, because it is the highest temperature at which bottom electrode contact could be maintained against oxidation in our capacitor over bit-line (COB) structure. The control of Pb precursor supply plays the most critical role in realizing a reliable process for PZT thin film deposition. We have monitored the changes in the microstructure and electrical properties of films on increasing the Pb precursor supply into the reaction chamber. Under optimized conditions, Ir/IrO2/PZT(100 nm)/Ir capacitor shows well-saturated hysteresis loops with a remanent polarization (Pr) of ∼ 28 μC/cm2 and coercive voltage of 0.8 V at 2.5 V.

AB - The growth characteristics of Pb(ZrxTi1-x)O 3 (PZT) thin films were investigated for application to high-density ferroelectric random access memories (FeRAM) devices. Films were grown by the liquid source metal-organic chemical vapor deposition (LS-MOCVD) method with tmhd-family precursors, such as Pb(tmhd)2, Zr(tmhd) 2(OiPr)2 and Ti(tmhd)2(O iPr)2, dissolved in octane. Film deposition was mainly performed at 560°C, because it is the highest temperature at which bottom electrode contact could be maintained against oxidation in our capacitor over bit-line (COB) structure. The control of Pb precursor supply plays the most critical role in realizing a reliable process for PZT thin film deposition. We have monitored the changes in the microstructure and electrical properties of films on increasing the Pb precursor supply into the reaction chamber. Under optimized conditions, Ir/IrO2/PZT(100 nm)/Ir capacitor shows well-saturated hysteresis loops with a remanent polarization (Pr) of ∼ 28 μC/cm2 and coercive voltage of 0.8 V at 2.5 V.

KW - COB

KW - Capacitor

KW - FeRAM

KW - Ferroelectric

KW - Hysteresis loop

KW - Ir

KW - Liquid delivery

KW - MOCVD

KW - PZT

KW - Thin film

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ER -

Liquid delivery metal-organic chemical vapor deposition of Pb(Zr _xTi_1-x)O₃ thin films for high-density ferroelectric random access memory application

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