LaNiO3 under-electrode layers for the growth of textured (Pb0.4Zr0.6)TiO3 thin films using pulsed laser deposition

S. S. Kim; B. I. Kim; Y. B. Park; J. H. Je

doi:10.1007/s003390051491

LaNiO₃ under-electrode layers for the growth of textured (Pb_0.4Zr_0.6)TiO₃ thin films using pulsed laser deposition

S. S. Kim, B. I. Kim, Y. B. Park, J. H. Je

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We investigated the structural properties of LaNiO₃ thin films of three different thicknesses deposited by pulsed laser deposition on Si(001) mainly by using a synchrotron X-ray scattering measurement. The LaNiO₃ thin films were grown with the (00l) preferred growth direction, showing completely random distribution in the in-plane direction. In the early stage of the growth, the film was almost unstrained. However, as the film grew further, tensile strain was markedly involved. Also its surface became rougher but its crystalline quality improved significantly with increasing film thickness. A completely (00l)-oriented (Pb_0.4Zr_0.6)TiO₃ thin film was successfully grown on such a LaNiO₃/Si(001) substrate at a substrate temperature of 350°C by using the same pulsed laser deposition. Our results show that the LaNiO₃ film can serve effectively as a bottom electrode layer for the preparation of a well-oriented (Pb_0.4Zr_0.6)TiO₃ thin film on Si substrates.

Original language	English
Pages (from-to)	S625-S628
Journal	Applied Physics A: Materials Science and Processing
Volume	69
Issue number	7
DOIs	https://doi.org/10.1007/s003390051491
State	Published - 1999
Externally published	Yes

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title = "LaNiO3 under-electrode layers for the growth of textured (Pb0.4Zr0.6)TiO3 thin films using pulsed laser deposition",

abstract = "We investigated the structural properties of LaNiO3 thin films of three different thicknesses deposited by pulsed laser deposition on Si(001) mainly by using a synchrotron X-ray scattering measurement. The LaNiO3 thin films were grown with the (00l) preferred growth direction, showing completely random distribution in the in-plane direction. In the early stage of the growth, the film was almost unstrained. However, as the film grew further, tensile strain was markedly involved. Also its surface became rougher but its crystalline quality improved significantly with increasing film thickness. A completely (00l)-oriented (Pb0.4Zr0.6)TiO3 thin film was successfully grown on such a LaNiO3/Si(001) substrate at a substrate temperature of 350°C by using the same pulsed laser deposition. Our results show that the LaNiO3 film can serve effectively as a bottom electrode layer for the preparation of a well-oriented (Pb0.4Zr0.6)TiO3 thin film on Si substrates.",

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year = "1999",

doi = "10.1007/s003390051491",

language = "English",

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T1 - LaNiO3 under-electrode layers for the growth of textured (Pb0.4Zr0.6)TiO3 thin films using pulsed laser deposition

AU - Kim, S. S.

AU - Kim, B. I.

AU - Park, Y. B.

AU - Je, J. H.

PY - 1999

Y1 - 1999

N2 - We investigated the structural properties of LaNiO3 thin films of three different thicknesses deposited by pulsed laser deposition on Si(001) mainly by using a synchrotron X-ray scattering measurement. The LaNiO3 thin films were grown with the (00l) preferred growth direction, showing completely random distribution in the in-plane direction. In the early stage of the growth, the film was almost unstrained. However, as the film grew further, tensile strain was markedly involved. Also its surface became rougher but its crystalline quality improved significantly with increasing film thickness. A completely (00l)-oriented (Pb0.4Zr0.6)TiO3 thin film was successfully grown on such a LaNiO3/Si(001) substrate at a substrate temperature of 350°C by using the same pulsed laser deposition. Our results show that the LaNiO3 film can serve effectively as a bottom electrode layer for the preparation of a well-oriented (Pb0.4Zr0.6)TiO3 thin film on Si substrates.

AB - We investigated the structural properties of LaNiO3 thin films of three different thicknesses deposited by pulsed laser deposition on Si(001) mainly by using a synchrotron X-ray scattering measurement. The LaNiO3 thin films were grown with the (00l) preferred growth direction, showing completely random distribution in the in-plane direction. In the early stage of the growth, the film was almost unstrained. However, as the film grew further, tensile strain was markedly involved. Also its surface became rougher but its crystalline quality improved significantly with increasing film thickness. A completely (00l)-oriented (Pb0.4Zr0.6)TiO3 thin film was successfully grown on such a LaNiO3/Si(001) substrate at a substrate temperature of 350°C by using the same pulsed laser deposition. Our results show that the LaNiO3 film can serve effectively as a bottom electrode layer for the preparation of a well-oriented (Pb0.4Zr0.6)TiO3 thin film on Si substrates.

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LaNiO₃ under-electrode layers for the growth of textured (Pb_0.4Zr_0.6)TiO₃ thin films using pulsed laser deposition

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