Investigation of the optimum mg doping concentration in p-type-doped layers of ingan blue laser diode structures

Chibuzo Onwukaeme, Han Youl Ryu

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

In GaN-based laser diode (LD) structures, Mg doping in p-type-doped layers has a significant influence on the device performance. As the doping concentration increases, the operation voltage decreases, whereas the output power decreases as a result of increased optical absorption, implying that optimization of the Mg doping concentration is required. In this study, we systematically investigated the effect of the Mg doping concentration in the AlGaN electron-blocking layer (EBL) and the AlGaN p-cladding layer on the output power, forward voltage, and wall-plug efficiency (WPE) of InGaN blue LD structures using numerical simulations. In the optimization of the EBL, an Al composition of 20% and an Mg doping concentration of 3 × 1019 cm−3 exhibited the best performance, with negligible electron leakage and a high WPE. The optimum Mg concentration of the p-AlGaN cladding layer was found to be ~1.5 × 1019 cm−3, where the maximum WPE of 38.6% was obtained for a blue LD with a threshold current density of 1 kA/cm2 and a slope efficiency of 2.1 W/A.

Original languageEnglish
Article number1335
JournalCrystals
Volume11
Issue number11
DOIs
StatePublished - Nov 2021

Bibliographical note

Publisher Copyright:
© 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https:// creativecommons.org/licenses/by/ 4.0/).

Keywords

  • Blue laser
  • High-power laser
  • InGaN
  • Laser diode
  • Nitride semiconductor

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