TY - GEN
T1 - Investigation of light extraction efficiency in AlGaN deep ultraviolet LEDs using FDTD simulations
AU - Ryu, Han Youl
AU - Shim, Jong In
PY - 2013
Y1 - 2013
N2 - Light extraction efficiency (LEE) in AlGaN deep ultraviolet (UV) light-emitting diodes (LEDs) is investigated using three-dimensional finite-difference time-domain simulations. For flip-chip LED structures, LEE is obtained to be <10% due to strong UV light absorption in the p-GaN layer. In addition, LEE of transverse-magnetic (TM) modes is found to be more than ten times smaller than that of transverse-electric (TE) modes, which explains the decreasing behavior of external quantum efficiency of UV LEDs with decreasing wavelengths.
AB - Light extraction efficiency (LEE) in AlGaN deep ultraviolet (UV) light-emitting diodes (LEDs) is investigated using three-dimensional finite-difference time-domain simulations. For flip-chip LED structures, LEE is obtained to be <10% due to strong UV light absorption in the p-GaN layer. In addition, LEE of transverse-magnetic (TM) modes is found to be more than ten times smaller than that of transverse-electric (TE) modes, which explains the decreasing behavior of external quantum efficiency of UV LEDs with decreasing wavelengths.
UR - http://www.scopus.com/inward/record.url?scp=84890467068&partnerID=8YFLogxK
U2 - 10.1109/NUSOD.2013.6633151
DO - 10.1109/NUSOD.2013.6633151
M3 - Conference contribution
AN - SCOPUS:84890467068
SN - 9781467363105
T3 - 13th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2013
SP - 115
EP - 116
BT - 13th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2013
T2 - 13th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2013
Y2 - 19 August 2013 through 22 August 2013
ER -