Investigation of light extraction efficiency and internal quantum efficiency in high-power vertical blue light-emitting diode with 3.3W output power

Tak Jeong; Jong Hyeob Baek; Ki Chang Jeong; Jun Seok Ha; Han Youl Ryu

doi:10.7567/JJAP.52.10MA09

Investigation of light extraction efficiency and internal quantum efficiency in high-power vertical blue light-emitting diode with 3.3W output power

Tak Jeong, Jong Hyeob Baek, Ki Chang Jeong, Jun Seok Ha, Han Youl Ryu

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Light extraction efficiency (LEE) and internal quantum efficiency (IQE) of InGaN-based vertical blue light-emitting diode (LED) structures are investigated by numerical simulations and experiments. LEE of vertical LEDs is calculated for various structural and material parameters by using three-dimensional finite-difference time-domain (FDTD) simulations, and the optimum textured patterns on the n-GaN surface is found from the FDTD simulation. High-power vertical LED structures are fabricated based on the simulation results. The output power at 3 A injection current is measured to be 3.3 W, and the peak value of the external quantum efficiency (EQE) is found to be 64%. In addition, LEE of the fabricated vertical LED is expected to be 70-80% from the FDTD simulations. Combining the results of EQE and LEE, the peak IQE of the experimented vertical LED can be estimated to be 80-90%.

Original language	English
Article number	10MA09
Journal	Japanese Journal of Applied Physics
Volume	52
Issue number	10 PART2
DOIs	https://doi.org/10.7567/JJAP.52.10MA09
State	Published - 2013

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title = "Investigation of light extraction efficiency and internal quantum efficiency in high-power vertical blue light-emitting diode with 3.3W output power",

abstract = "Light extraction efficiency (LEE) and internal quantum efficiency (IQE) of InGaN-based vertical blue light-emitting diode (LED) structures are investigated by numerical simulations and experiments. LEE of vertical LEDs is calculated for various structural and material parameters by using three-dimensional finite-difference time-domain (FDTD) simulations, and the optimum textured patterns on the n-GaN surface is found from the FDTD simulation. High-power vertical LED structures are fabricated based on the simulation results. The output power at 3 A injection current is measured to be 3.3 W, and the peak value of the external quantum efficiency (EQE) is found to be 64%. In addition, LEE of the fabricated vertical LED is expected to be 70-80% from the FDTD simulations. Combining the results of EQE and LEE, the peak IQE of the experimented vertical LED can be estimated to be 80-90%.",

author = "Tak Jeong and Baek, {Jong Hyeob} and Jeong, {Ki Chang} and Ha, {Jun Seok} and Ryu, {Han Youl}",

year = "2013",

doi = "10.7567/JJAP.52.10MA09",

language = "English",

volume = "52",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Investigation of light extraction efficiency and internal quantum efficiency in high-power vertical blue light-emitting diode with 3.3W output power

AU - Jeong, Tak

AU - Baek, Jong Hyeob

AU - Jeong, Ki Chang

AU - Ha, Jun Seok

AU - Ryu, Han Youl

PY - 2013

Y1 - 2013

N2 - Light extraction efficiency (LEE) and internal quantum efficiency (IQE) of InGaN-based vertical blue light-emitting diode (LED) structures are investigated by numerical simulations and experiments. LEE of vertical LEDs is calculated for various structural and material parameters by using three-dimensional finite-difference time-domain (FDTD) simulations, and the optimum textured patterns on the n-GaN surface is found from the FDTD simulation. High-power vertical LED structures are fabricated based on the simulation results. The output power at 3 A injection current is measured to be 3.3 W, and the peak value of the external quantum efficiency (EQE) is found to be 64%. In addition, LEE of the fabricated vertical LED is expected to be 70-80% from the FDTD simulations. Combining the results of EQE and LEE, the peak IQE of the experimented vertical LED can be estimated to be 80-90%.

AB - Light extraction efficiency (LEE) and internal quantum efficiency (IQE) of InGaN-based vertical blue light-emitting diode (LED) structures are investigated by numerical simulations and experiments. LEE of vertical LEDs is calculated for various structural and material parameters by using three-dimensional finite-difference time-domain (FDTD) simulations, and the optimum textured patterns on the n-GaN surface is found from the FDTD simulation. High-power vertical LED structures are fabricated based on the simulation results. The output power at 3 A injection current is measured to be 3.3 W, and the peak value of the external quantum efficiency (EQE) is found to be 64%. In addition, LEE of the fabricated vertical LED is expected to be 70-80% from the FDTD simulations. Combining the results of EQE and LEE, the peak IQE of the experimented vertical LED can be estimated to be 80-90%.

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U2 - 10.7567/JJAP.52.10MA09

DO - 10.7567/JJAP.52.10MA09

M3 - Article

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SN - 0021-4922

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 10 PART2

M1 - 10MA09

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Investigation of light extraction efficiency and internal quantum efficiency in high-power vertical blue light-emitting diode with 3.3W output power

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