Investigation of Coupling Effect on Capacitor-based Neural Network

Junsu Yu; Sungmin Hwang; Hyungjin Kim; Byung Gook Park

doi:10.1109/SNW56633.2022.9889047

Investigation of Coupling Effect on Capacitor-based Neural Network

Junsu Yu, Sungmin Hwang, Hyungjin Kim, Byung Gook Park

Seoul National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, we investigate the coupling effect on flash cell capacitor-based neural network. Since the readout scheme is implemented to float unselected wordline (WL), it is coupled to the across bitline (BL) and the neighbor WL voltage. Consequently, unselected cell causes the displacement current and affects the BL charge accumulation. We examine how the coupling effect affects Vector-Matrix Multiplication (VMM) and the neural network inference on the scaled device, using TCAD and system-level simulation.

Original language	English
Title of host publication	2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665459792
DOIs	https://doi.org/10.1109/SNW56633.2022.9889047
State	Published - 2022
Event	2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022 - Honolulu, United States Duration: 11 Jun 2022 → 12 Jun 2022

Publication series

Name	2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022

Conference

Conference	2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022
Country/Territory	United States
City	Honolulu
Period	11/06/22 → 12/06/22

Bibliographical note

Publisher Copyright:
© 2022 IEEE.

Access to Document

10.1109/SNW56633.2022.9889047

Cite this

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title = "Investigation of Coupling Effect on Capacitor-based Neural Network",

abstract = "In this paper, we investigate the coupling effect on flash cell capacitor-based neural network. Since the readout scheme is implemented to float unselected wordline (WL), it is coupled to the across bitline (BL) and the neighbor WL voltage. Consequently, unselected cell causes the displacement current and affects the BL charge accumulation. We examine how the coupling effect affects Vector-Matrix Multiplication (VMM) and the neural network inference on the scaled device, using TCAD and system-level simulation.",

author = "Junsu Yu and Sungmin Hwang and Hyungjin Kim and Park, {Byung Gook}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022 ; Conference date: 11-06-2022 Through 12-06-2022",

year = "2022",

doi = "10.1109/SNW56633.2022.9889047",

language = "English",

series = "2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022",

address = "United States",

}

Yu, J, Hwang, S, Kim, H & Park, BG 2022, Investigation of Coupling Effect on Capacitor-based Neural Network. in 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022. 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022, Institute of Electrical and Electronics Engineers Inc., 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022, Honolulu, United States, 11/06/22. https://doi.org/10.1109/SNW56633.2022.9889047

Investigation of Coupling Effect on Capacitor-based Neural Network. / Yu, Junsu; Hwang, Sungmin; Kim, Hyungjin et al.
2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Yu, Junsu

AU - Hwang, Sungmin

AU - Kim, Hyungjin

AU - Park, Byung Gook

PY - 2022

Y1 - 2022

N2 - In this paper, we investigate the coupling effect on flash cell capacitor-based neural network. Since the readout scheme is implemented to float unselected wordline (WL), it is coupled to the across bitline (BL) and the neighbor WL voltage. Consequently, unselected cell causes the displacement current and affects the BL charge accumulation. We examine how the coupling effect affects Vector-Matrix Multiplication (VMM) and the neural network inference on the scaled device, using TCAD and system-level simulation.

AB - In this paper, we investigate the coupling effect on flash cell capacitor-based neural network. Since the readout scheme is implemented to float unselected wordline (WL), it is coupled to the across bitline (BL) and the neighbor WL voltage. Consequently, unselected cell causes the displacement current and affects the BL charge accumulation. We examine how the coupling effect affects Vector-Matrix Multiplication (VMM) and the neural network inference on the scaled device, using TCAD and system-level simulation.

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U2 - 10.1109/SNW56633.2022.9889047

DO - 10.1109/SNW56633.2022.9889047

M3 - Conference contribution

AN - SCOPUS:85141035841

T3 - 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022

BT - 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022

Y2 - 11 June 2022 through 12 June 2022

ER -

Investigation of Coupling Effect on Capacitor-based Neural Network

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