Internal quantum efficiency of GaN-based light-emitting diodes grown on silicon substrates determined from rate equation analyses

Han Youl Ryu, Ki Seong Jeon, Jun Ho Sung, Min Woo Lee, Euna Lee, Hooyoung Song, Min Gu Kang, Yoonho Choi, Jeong Soo Lee

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We present a convenient and reliable method for determining the internal quantum efficiency (IQE) in GaN-based blue light-emitting diodes (LEDs) grown on Si(111) substrates based on the carrier rate equation model. By using the peak point of the efficiency curve in photoluminescence (PL) measurements as the parameter of the rate equation analysis, the IQE can be unambiguously determined without any pre-assumed parameters. The theoretical IQE model is used to fit the measured PL efficiency curves and the IQE of LED samples are determined. The maximum IQE of the LED sample grown on the Si substrate was obtained to be 0.74, which is found to agree well with the results obtained by conventional temperature-dependent PL measurements.

Original languageEnglish
Pages (from-to)1600-1603
Number of pages4
JournalCurrent Applied Physics
Volume13
Issue number8
DOIs
StatePublished - 2013

Keywords

  • GaN on Si
  • Internal quantum efficiency
  • Light-emitting diode
  • Rate equation

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