In2O3 thin films prepared on TiAIN substrates using a triethylindium and oxygen mixture

Hyoun Woo Kim; Sun Keun Hwang; Won Seung Cho; Taegyung Ko; Seung Yong Choi; Wan In Lee; Sang Eon Park; Junghoon Joo; Dong Ik Kim; Seong Gyoon Kim; Byung Hak Choe; Seok Hong Min; Jae Ho Choi

doi:10.4028/3-908451-31-0.1597

In₂O₃ thin films prepared on TiAIN substrates using a triethylindium and oxygen mixture

Hyoun Woo Kim
, Sun Keun Hwang
, Won Seung Cho
, Taegyung Ko
, Seung Yong Choi
, Wan In Lee
, Sang Eon Park
, Junghoon Joo
, Dong Ik Kim
, Seong Gyoon Kim
, Byung Hak Choe
, Seok Hong Min
, Jae Ho Choi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper reports the fabrication of indium oxide (In₂O ₃) films using a triethylindium and oxygen mixture. The deposition has been carried out on TiAIN substrates (200-350°C). We have established the correlation between the substrate temperature and the structural properties. The films deposited at 300-350°C were polycrystalline, whereas those deposited at 200 °C was close to amorphous. XRD analysis and SEM images indicated that the films grown at 350°C had grained structures with the (222) preferred orientation. The room-temperature photoluminescence spectra of the In₂O₃ films exhibited a visible light emission.

Original language	English
Title of host publication	Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia
Publisher	Trans Tech Publications Ltd
Pages	1597-1600
Number of pages	4
Edition	PART 2
ISBN (Print)	3908451310, 9783908451310
DOIs	https://doi.org/10.4028/3-908451-31-0.1597
State	Published - 2007
Event	IUMRS International Conference in Asia 2006, IUMRS-ICA 2006 - Jeju, Korea, Republic of Duration: 10 Sep 2006 → 14 Sep 2006

Publication series

Name	Solid State Phenomena
Number	PART 2
Volume	124-126
ISSN (Print)	1012-0394

Conference

Conference	IUMRS International Conference in Asia 2006, IUMRS-ICA 2006
Country/Territory	Korea, Republic of
City	Jeju
Period	10/09/06 → 14/09/06

Keywords

Indium oxide
Thin films
TiAiN

Access to Document

10.4028/3-908451-31-0.1597

Cite this

Kim, H. W., Hwang, S. K., Cho, W. S., Ko, T., Choi, S. Y., Lee, W. I., Park, S. E., Joo, J., Kim, D. I., Kim, S. G., Choe, B. H., Min, S. H., & Choi, J. H. (2007). In₂O₃ thin films prepared on TiAIN substrates using a triethylindium and oxygen mixture. In Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia (PART 2 ed., pp. 1597-1600). (Solid State Phenomena; Vol. 124-126, No. PART 2). Trans Tech Publications Ltd. https://doi.org/10.4028/3-908451-31-0.1597

@inproceedings{0e3c73b8bf43437c912e95e63b28e79b,

title = "In2O3 thin films prepared on TiAIN substrates using a triethylindium and oxygen mixture",

abstract = "This paper reports the fabrication of indium oxide (In2O 3) films using a triethylindium and oxygen mixture. The deposition has been carried out on TiAIN substrates (200-350°C). We have established the correlation between the substrate temperature and the structural properties. The films deposited at 300-350°C were polycrystalline, whereas those deposited at 200 °C was close to amorphous. XRD analysis and SEM images indicated that the films grown at 350°C had grained structures with the (222) preferred orientation. The room-temperature photoluminescence spectra of the In2O3 films exhibited a visible light emission.",

keywords = "Indium oxide, Thin films, TiAiN",

author = "Kim, \{Hyoun Woo\} and Hwang, \{Sun Keun\} and Cho, \{Won Seung\} and Taegyung Ko and Choi, \{Seung Yong\} and Lee, \{Wan In\} and Park, \{Sang Eon\} and Junghoon Joo and Kim, \{Dong Ik\} and Kim, \{Seong Gyoon\} and Choe, \{Byung Hak\} and Min, \{Seok Hong\} and Choi, \{Jae Ho\}",

year = "2007",

doi = "10.4028/3-908451-31-0.1597",

language = "English",

isbn = "3908451310",

series = "Solid State Phenomena",

publisher = "Trans Tech Publications Ltd",

number = "PART 2",

pages = "1597--1600",

booktitle = "Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia",

edition = "PART 2",

note = "IUMRS International Conference in Asia 2006, IUMRS-ICA 2006 ; Conference date: 10-09-2006 Through 14-09-2006",

}

Kim, HW, Hwang, SK, Cho, WS, Ko, T, Choi, SY, Lee, WI, Park, SE, Joo, J, Kim, DI, Kim, SG, Choe, BH, Min, SH & Choi, JH 2007, In₂O₃ thin films prepared on TiAIN substrates using a triethylindium and oxygen mixture. in Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 2 edn, Solid State Phenomena, no. PART 2, vol. 124-126, Trans Tech Publications Ltd, pp. 1597-1600, IUMRS International Conference in Asia 2006, IUMRS-ICA 2006, Jeju, Korea, Republic of, 10/09/06. https://doi.org/10.4028/3-908451-31-0.1597

In₂O₃ thin films prepared on TiAIN substrates using a triethylindium and oxygen mixture. / Kim, Hyoun Woo; Hwang, Sun Keun; Cho, Won Seung et al.
Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 2. ed. Trans Tech Publications Ltd, 2007. p. 1597-1600 (Solid State Phenomena; Vol. 124-126, No. PART 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - In2O3 thin films prepared on TiAIN substrates using a triethylindium and oxygen mixture

AU - Kim, Hyoun Woo

AU - Hwang, Sun Keun

AU - Cho, Won Seung

AU - Ko, Taegyung

AU - Choi, Seung Yong

AU - Lee, Wan In

AU - Park, Sang Eon

AU - Joo, Junghoon

AU - Kim, Dong Ik

AU - Kim, Seong Gyoon

AU - Choe, Byung Hak

AU - Min, Seok Hong

AU - Choi, Jae Ho

PY - 2007

Y1 - 2007

N2 - This paper reports the fabrication of indium oxide (In2O 3) films using a triethylindium and oxygen mixture. The deposition has been carried out on TiAIN substrates (200-350°C). We have established the correlation between the substrate temperature and the structural properties. The films deposited at 300-350°C were polycrystalline, whereas those deposited at 200 °C was close to amorphous. XRD analysis and SEM images indicated that the films grown at 350°C had grained structures with the (222) preferred orientation. The room-temperature photoluminescence spectra of the In2O3 films exhibited a visible light emission.

AB - This paper reports the fabrication of indium oxide (In2O 3) films using a triethylindium and oxygen mixture. The deposition has been carried out on TiAIN substrates (200-350°C). We have established the correlation between the substrate temperature and the structural properties. The films deposited at 300-350°C were polycrystalline, whereas those deposited at 200 °C was close to amorphous. XRD analysis and SEM images indicated that the films grown at 350°C had grained structures with the (222) preferred orientation. The room-temperature photoluminescence spectra of the In2O3 films exhibited a visible light emission.

KW - Indium oxide

KW - Thin films

KW - TiAiN

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DO - 10.4028/3-908451-31-0.1597

M3 - Conference contribution

AN - SCOPUS:38549171517

SN - 3908451310

SN - 9783908451310

T3 - Solid State Phenomena

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EP - 1600

BT - Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia

PB - Trans Tech Publications Ltd

T2 - IUMRS International Conference in Asia 2006, IUMRS-ICA 2006

Y2 - 10 September 2006 through 14 September 2006

ER -