Abstract
We report the instantaneous pulsed-light cross-linking of polymer gate dielectrics on a flexible substrate by using intensely pulsed white light (IPWL) irradiation. Irradiation with IPWL for only 1.8 s of a poly(4-vinylphenol) (PVP) thin film with the cross-linking agent poly(melamine-co-formaldehyde) (PMF) deposited on a plastic substrate was found to yield fully cross-linked PVP films. It was confirmed that the IPWL-cross-linked PVP films have smooth pinhole-free surfaces and exhibit a low leakage current density, organic solvent resistance, and good compatibility with organic semiconductor, and that they can be used as replacements for typical PVP dielectrics that are cross-linked with time and energy intensive thermal heating processes. The synchronization of the IPWL irradiation with substrate transfer was found to enable the preparation of cross-linked PVP films on large area substrates with a highly uniform capacitance. Flexible OTFT based on IPWL-cross-linked PVP dielectrics were found to exhibit good electrical performance that is comparable to that of devices with thermally cross-linked PVP dielectric, as well as excellent deformation stability even at a bending radius of 3 mm.
Original language | English |
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Pages (from-to) | 11721-11731 |
Number of pages | 11 |
Journal | ACS applied materials & interfaces |
Volume | 9 |
Issue number | 13 |
DOIs | |
State | Published - 5 Apr 2017 |
Bibliographical note
Publisher Copyright:© 2017 American Chemical Society.
Keywords
- cross-linking
- flexible substrate
- gate dielectric
- intensely pulsed white light
- organic thin-film transistors