Influence of wet chemical cleaning on properties of magnetic tunnel junction stack for magnetic RAM

Young Soo Song; Sang Jin Park; Tae Wan Kim; Chee Won Cung

doi:10.1149/1.1652423

Influence of wet chemical cleaning on properties of magnetic tunnel junction stack for magnetic RAM

Young Soo Song, Sang Jin Park, Tae Wan Kim, Chee Won Cung

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Abstract

The wet chemical cleaning of a magnetic tunnel junction (MTJ) stack after dry etching was carried out to eliminate the redeposited materials on the sidewall of the MTJ and to examine the effect on the properties of the MTJ. Wet cleaning may result in the degradation of electrical properties of a MTJ. The resistance (R)-magnetic field (H) curve after cleaning showed that CoFe pinned layer was switched at low magnetic field. It was proved from transmission electron microscopy that CoFe and IrMn layers were attacked and the interface between the two layers was damaged due to the reaction with cleaning solutions.

Original language	English
Pages (from-to)	C64-C66
Journal	Electrochemical and Solid-State Letters
Volume	7
Issue number	5
DOIs	https://doi.org/10.1149/1.1652423
State	Published - 2004

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title = "Influence of wet chemical cleaning on properties of magnetic tunnel junction stack for magnetic RAM",

abstract = "The wet chemical cleaning of a magnetic tunnel junction (MTJ) stack after dry etching was carried out to eliminate the redeposited materials on the sidewall of the MTJ and to examine the effect on the properties of the MTJ. Wet cleaning may result in the degradation of electrical properties of a MTJ. The resistance (R)-magnetic field (H) curve after cleaning showed that CoFe pinned layer was switched at low magnetic field. It was proved from transmission electron microscopy that CoFe and IrMn layers were attacked and the interface between the two layers was damaged due to the reaction with cleaning solutions.",

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AU - Song, Young Soo

AU - Park, Sang Jin

AU - Kim, Tae Wan

AU - Cung, Chee Won

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AB - The wet chemical cleaning of a magnetic tunnel junction (MTJ) stack after dry etching was carried out to eliminate the redeposited materials on the sidewall of the MTJ and to examine the effect on the properties of the MTJ. Wet cleaning may result in the degradation of electrical properties of a MTJ. The resistance (R)-magnetic field (H) curve after cleaning showed that CoFe pinned layer was switched at low magnetic field. It was proved from transmission electron microscopy that CoFe and IrMn layers were attacked and the interface between the two layers was damaged due to the reaction with cleaning solutions.

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

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ER -

Influence of wet chemical cleaning on properties of magnetic tunnel junction stack for magnetic RAM

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