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Influence of sidewall thickness variation on transfer characteristics of L-shaped impact-ionization MOS transistor
Min Chul Sun, Wandong Kim, Jeong Hoon Oh, Kyung Chang Ryoo, Sang Wan Kim, Garam Kim, Hyun Woo Kim, Sunghun Jung, Dae Woong Kwon, Ji Soo Jang, Jang Hyun Kim, Byung Gook Park
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review