Influence of sidewall thickness variation on transfer characteristics of L-shaped impact-ionization MOS transistor

Min Chul Sun; Wandong Kim; Jeong Hoon Oh; Kyung Chang Ryoo; Sang Wan Kim; Garam Kim; Hyun Woo Kim; Sunghun Jung; Dae Woong Kwon; Ji Soo Jang; Jang Hyun Kim; Byung Gook Park

doi:10.1109/NANO.2010.5697891

Influence of sidewall thickness variation on transfer characteristics of L-shaped impact-ionization MOS transistor

Min Chul Sun, Wandong Kim, Jeong Hoon Oh, Kyung Chang Ryoo, Sang Wan Kim, Garam Kim, Hyun Woo Kim, Sunghun Jung, Dae Woong Kwon, Ji Soo Jang, Jang Hyun Kim, Byung Gook Park

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this study, the influence of sidewall thickness on the threshold voltage and on-current of L-shaped Impactionization metal-oxide-semiconductor transistor (I-MOS) is investigated. For the sidewall thickness in the range of 10 nm to 20 nm, the devices of thicker sidewall show lower on-current and higher threshold voltage. This is because the electron concentration between the channel and the most active ionization region rapidly decreases as the sidewall gets thicker. As a result, a precise control of sidewall formation is needed in fabricating Lshaped I-MOS devices. Also, obtaining the required on-current and reliability at the same time, as well as suppressing device variability due to sidewall thickness variation, is expected to be challenging.

Original language	English
Title of host publication	2010 10th IEEE Conference on Nanotechnology, NANO 2010
Pages	250-253
Number of pages	4
DOIs	https://doi.org/10.1109/NANO.2010.5697891
State	Published - 2010
Event	2010 10th IEEE Conference on Nanotechnology, NANO 2010 - Ilsan, Gyeonggi-Do, Korea, Republic of Duration: 17 Aug 2010 → 20 Aug 2010

Publication series

Name	2010 10th IEEE Conference on Nanotechnology, NANO 2010

Conference

Conference	2010 10th IEEE Conference on Nanotechnology, NANO 2010
Country/Territory	Korea, Republic of
City	Ilsan, Gyeonggi-Do
Period	17/08/10 → 20/08/10

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10.1109/NANO.2010.5697891

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Sun, M. C., Kim, W., Oh, J. H., Ryoo, K. C., Kim, S. W., Kim, G., Kim, H. W., Jung, S., Kwon, D. W., Jang, J. S., Kim, J. H., & Park, B. G. (2010). Influence of sidewall thickness variation on transfer characteristics of L-shaped impact-ionization MOS transistor. In 2010 10th IEEE Conference on Nanotechnology, NANO 2010 (pp. 250-253). Article 5697891 (2010 10th IEEE Conference on Nanotechnology, NANO 2010). https://doi.org/10.1109/NANO.2010.5697891

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title = "Influence of sidewall thickness variation on transfer characteristics of L-shaped impact-ionization MOS transistor",

abstract = "In this study, the influence of sidewall thickness on the threshold voltage and on-current of L-shaped Impactionization metal-oxide-semiconductor transistor (I-MOS) is investigated. For the sidewall thickness in the range of 10 nm to 20 nm, the devices of thicker sidewall show lower on-current and higher threshold voltage. This is because the electron concentration between the channel and the most active ionization region rapidly decreases as the sidewall gets thicker. As a result, a precise control of sidewall formation is needed in fabricating Lshaped I-MOS devices. Also, obtaining the required on-current and reliability at the same time, as well as suppressing device variability due to sidewall thickness variation, is expected to be challenging.",

author = "Sun, {Min Chul} and Wandong Kim and Oh, {Jeong Hoon} and Ryoo, {Kyung Chang} and Kim, {Sang Wan} and Garam Kim and Kim, {Hyun Woo} and Sunghun Jung and Kwon, {Dae Woong} and Jang, {Ji Soo} and Kim, {Jang Hyun} and Park, {Byung Gook}",

year = "2010",

doi = "10.1109/NANO.2010.5697891",

language = "English",

isbn = "9781424470334",

series = "2010 10th IEEE Conference on Nanotechnology, NANO 2010",

pages = "250--253",

booktitle = "2010 10th IEEE Conference on Nanotechnology, NANO 2010",

note = "2010 10th IEEE Conference on Nanotechnology, NANO 2010 ; Conference date: 17-08-2010 Through 20-08-2010",

}

Sun, MC, Kim, W, Oh, JH, Ryoo, KC, Kim, SW, Kim, G, Kim, HW, Jung, S, Kwon, DW, Jang, JS, Kim, JH & Park, BG 2010, Influence of sidewall thickness variation on transfer characteristics of L-shaped impact-ionization MOS transistor. in 2010 10th IEEE Conference on Nanotechnology, NANO 2010., 5697891, 2010 10th IEEE Conference on Nanotechnology, NANO 2010, pp. 250-253, 2010 10th IEEE Conference on Nanotechnology, NANO 2010, Ilsan, Gyeonggi-Do, Korea, Republic of, 17/08/10. https://doi.org/10.1109/NANO.2010.5697891

Influence of sidewall thickness variation on transfer characteristics of L-shaped impact-ionization MOS transistor. / Sun, Min Chul; Kim, Wandong; Oh, Jeong Hoon et al.
2010 10th IEEE Conference on Nanotechnology, NANO 2010. 2010. p. 250-253 5697891 (2010 10th IEEE Conference on Nanotechnology, NANO 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Influence of sidewall thickness variation on transfer characteristics of L-shaped impact-ionization MOS transistor

AU - Sun, Min Chul

AU - Kim, Wandong

AU - Oh, Jeong Hoon

AU - Ryoo, Kyung Chang

AU - Kim, Sang Wan

AU - Kim, Garam

AU - Kim, Hyun Woo

AU - Jung, Sunghun

AU - Kwon, Dae Woong

AU - Jang, Ji Soo

AU - Kim, Jang Hyun

AU - Park, Byung Gook

PY - 2010

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N2 - In this study, the influence of sidewall thickness on the threshold voltage and on-current of L-shaped Impactionization metal-oxide-semiconductor transistor (I-MOS) is investigated. For the sidewall thickness in the range of 10 nm to 20 nm, the devices of thicker sidewall show lower on-current and higher threshold voltage. This is because the electron concentration between the channel and the most active ionization region rapidly decreases as the sidewall gets thicker. As a result, a precise control of sidewall formation is needed in fabricating Lshaped I-MOS devices. Also, obtaining the required on-current and reliability at the same time, as well as suppressing device variability due to sidewall thickness variation, is expected to be challenging.

AB - In this study, the influence of sidewall thickness on the threshold voltage and on-current of L-shaped Impactionization metal-oxide-semiconductor transistor (I-MOS) is investigated. For the sidewall thickness in the range of 10 nm to 20 nm, the devices of thicker sidewall show lower on-current and higher threshold voltage. This is because the electron concentration between the channel and the most active ionization region rapidly decreases as the sidewall gets thicker. As a result, a precise control of sidewall formation is needed in fabricating Lshaped I-MOS devices. Also, obtaining the required on-current and reliability at the same time, as well as suppressing device variability due to sidewall thickness variation, is expected to be challenging.

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ER -

Influence of sidewall thickness variation on transfer characteristics of L-shaped impact-ionization MOS transistor

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