TY - JOUR
T1 - Influence of Dielectric Layers on Charge Transport through Diketopyrrolopyrrole-Containing Polymer Films
T2 - Dielectric Polarizability vs Capacitance
AU - Lee, Jiyoul
AU - Chung, Jong Won
AU - Yoon, Gyu Bok
AU - Lee, Moo Hyung
AU - Kim, Do Hwan
AU - Park, Jozeph
AU - Lee, Jin Kyun
AU - Kang, Moon Sung
N1 - Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/11/9
Y1 - 2016/11/9
N2 - Field-effect mobility of a polymer semiconductor film is known to be enhanced when the gate dielectric interfacing with the film is weakly polarizable. Accordingly, gate dielectrics with lower dielectric constant (k) are preferred for attaining polymer field-effect transistors (PFETs) with larger mobilities. At the same time, it is also known that inducing more charge carriers into the polymer semiconductor films helps in enhancing their field-effect mobility, because the large number of traps presented in such a disorder system can be compensated substantially. In this sense, it may seem that employing higher k dielectrics is rather beneficial because capacitance is proportional to the dielectric constant. This, however, contradicts with the statement above. In this study, we compare the impact of the two, i.e., the polarizability and the capacitance of the gate dielectric, on the transport properties of poly[(diketopyrrolopyrrole)-alt-(2,2′-(1,4-phenylene)bisthiophene)] (PDPPTPT) semiconductor layers in an FET architecture. For the study, three different dielectric layers were employed: fluorinated organic CYTOP (k = ∼2), poly(methyl methacrylate) (k = ∼4), and relaxor ferroelectric poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene) (k = ∼60). The beneficial influence of attaining more carriers in the PDPPTPT films on their charge transport properties was consistently observed from all three systems. However, the more dominant factor determining the large carrier mobility was the low polarizability of the gate dielectric rather than its large capacitance; field-effect mobilities of PDPPTPT films were always larger when lower k dielectric was employed than when higher k dielectric was used. The higher mobilities obtained when using lower k dielectrics could be attributed to the suppressed distribution of the density of localized states (DOS) near the transport level and to the resulting enhanced electronic coupling between the macromolecules.
AB - Field-effect mobility of a polymer semiconductor film is known to be enhanced when the gate dielectric interfacing with the film is weakly polarizable. Accordingly, gate dielectrics with lower dielectric constant (k) are preferred for attaining polymer field-effect transistors (PFETs) with larger mobilities. At the same time, it is also known that inducing more charge carriers into the polymer semiconductor films helps in enhancing their field-effect mobility, because the large number of traps presented in such a disorder system can be compensated substantially. In this sense, it may seem that employing higher k dielectrics is rather beneficial because capacitance is proportional to the dielectric constant. This, however, contradicts with the statement above. In this study, we compare the impact of the two, i.e., the polarizability and the capacitance of the gate dielectric, on the transport properties of poly[(diketopyrrolopyrrole)-alt-(2,2′-(1,4-phenylene)bisthiophene)] (PDPPTPT) semiconductor layers in an FET architecture. For the study, three different dielectric layers were employed: fluorinated organic CYTOP (k = ∼2), poly(methyl methacrylate) (k = ∼4), and relaxor ferroelectric poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene) (k = ∼60). The beneficial influence of attaining more carriers in the PDPPTPT films on their charge transport properties was consistently observed from all three systems. However, the more dominant factor determining the large carrier mobility was the low polarizability of the gate dielectric rather than its large capacitance; field-effect mobilities of PDPPTPT films were always larger when lower k dielectric was employed than when higher k dielectric was used. The higher mobilities obtained when using lower k dielectrics could be attributed to the suppressed distribution of the density of localized states (DOS) near the transport level and to the resulting enhanced electronic coupling between the macromolecules.
KW - Gaussian disorder model
KW - charge transport
KW - dielectric layer
KW - diketopyrrolopyrrole-containing polymer
KW - polymer field-effect transistors
UR - http://www.scopus.com/inward/record.url?scp=84994706960&partnerID=8YFLogxK
U2 - 10.1021/acsami.6b09993
DO - 10.1021/acsami.6b09993
M3 - Article
AN - SCOPUS:84994706960
SN - 1944-8244
VL - 8
SP - 30344
EP - 30350
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
IS - 44
ER -