Improvement in photo-bias stability of high-mobility indium zinc oxide thin-film transistors by oxygen high-pressure annealing

Se Yeob Park; Ji Hun Song; Chang Kyu Lee; Byeong Geun Son; Chul Kyu Lee; Hyo Jin Kim; Rino Choi; Yu Jin Choi; Un Ki Kim; Cheol Seong Hwang; Hyeong Joon Kim; Jae Kyeong Jeong

doi:10.1109/LED.2013.2259574

Improvement in photo-bias stability of high-mobility indium zinc oxide thin-film transistors by oxygen high-pressure annealing

Se Yeob Park, Ji Hun Song, Chang Kyu Lee, Byeong Geun Son, Chul Kyu Lee, Hyo Jin Kim, Rino Choi, Yu Jin Choi, Un Ki Kim, Cheol Seong Hwang, Hyeong Joon Kim, Jae Kyeong Jeong

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64 Scopus citations

Abstract

This letter examines the effect of oxygen (O₂) highpressure annealing (HPA) on indium zinc oxide (IZO) thinfilm transistors (TFTs) with a high-quality Al₂O₃ passivation layer. The IZO TFTs anneal under an O₂ atmosphere at 9 atm exhibits a high field-effect mobility, low subthreshold gate swing, moderate threshold voltage (V _th), and high I_ON/_OFF ratio of 30.4 cm ²/Vs, 0.10 V/decade, 0.79 V, and 108, respectively. In addition, the O₂ HPA-treated IZO TFT has superior reliability (δVth= -0.5 V) to that of the 0.2-atm-annealed device (δVth= -3.7 V) under negative bias illumination stress conditions. This improvement can be attributed to the reduced concentration of oxygen vacancy defects in the IZO channel layer during the O₂ HPA treatment.

Original language	English
Article number	6522496
Pages (from-to)	894-896
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	7
DOIs	https://doi.org/10.1109/LED.2013.2259574
State	Published - 2013

Keywords

High mobility
indium zinc oxide semiconductor
oxygen vacancy
photo-bias stability
thin-film transistors (TFTs)

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10.1109/LED.2013.2259574

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Park, S. Y., Song, J. H., Lee, C. K., Son, B. G., Lee, C. K., Kim, H. J., Choi, R., Choi, Y. J., Kim, U. K., Hwang, C. S., Kim, H. J., & Jeong, J. K. (2013). Improvement in photo-bias stability of high-mobility indium zinc oxide thin-film transistors by oxygen high-pressure annealing. IEEE Electron Device Letters, 34(7), 894-896. Article 6522496. https://doi.org/10.1109/LED.2013.2259574

@article{d650c40f41214938bd76aead1dd22988,

title = "Improvement in photo-bias stability of high-mobility indium zinc oxide thin-film transistors by oxygen high-pressure annealing",

abstract = "This letter examines the effect of oxygen (O2) highpressure annealing (HPA) on indium zinc oxide (IZO) thinfilm transistors (TFTs) with a high-quality Al2O3 passivation layer. The IZO TFTs anneal under an O2 atmosphere at 9 atm exhibits a high field-effect mobility, low subthreshold gate swing, moderate threshold voltage (V th), and high ION/OFF ratio of 30.4 cm 2/Vs, 0.10 V/decade, 0.79 V, and 108, respectively. In addition, the O2 HPA-treated IZO TFT has superior reliability (δVth= -0.5 V) to that of the 0.2-atm-annealed device (δVth= -3.7 V) under negative bias illumination stress conditions. This improvement can be attributed to the reduced concentration of oxygen vacancy defects in the IZO channel layer during the O2 HPA treatment.",

keywords = "High mobility, indium zinc oxide semiconductor, oxygen vacancy, photo-bias stability, thin-film transistors (TFTs)",

author = "Park, {Se Yeob} and Song, {Ji Hun} and Lee, {Chang Kyu} and Son, {Byeong Geun} and Lee, {Chul Kyu} and Kim, {Hyo Jin} and Rino Choi and Choi, {Yu Jin} and Kim, {Un Ki} and Hwang, {Cheol Seong} and Kim, {Hyeong Joon} and Jeong, {Jae Kyeong}",

year = "2013",

doi = "10.1109/LED.2013.2259574",

language = "English",

volume = "34",

pages = "894--896",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

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TY - JOUR

T1 - Improvement in photo-bias stability of high-mobility indium zinc oxide thin-film transistors by oxygen high-pressure annealing

AU - Park, Se Yeob

AU - Song, Ji Hun

AU - Lee, Chang Kyu

AU - Son, Byeong Geun

AU - Lee, Chul Kyu

AU - Kim, Hyo Jin

AU - Choi, Rino

AU - Choi, Yu Jin

AU - Kim, Un Ki

AU - Hwang, Cheol Seong

AU - Kim, Hyeong Joon

AU - Jeong, Jae Kyeong

PY - 2013

Y1 - 2013

N2 - This letter examines the effect of oxygen (O2) highpressure annealing (HPA) on indium zinc oxide (IZO) thinfilm transistors (TFTs) with a high-quality Al2O3 passivation layer. The IZO TFTs anneal under an O2 atmosphere at 9 atm exhibits a high field-effect mobility, low subthreshold gate swing, moderate threshold voltage (V th), and high ION/OFF ratio of 30.4 cm 2/Vs, 0.10 V/decade, 0.79 V, and 108, respectively. In addition, the O2 HPA-treated IZO TFT has superior reliability (δVth= -0.5 V) to that of the 0.2-atm-annealed device (δVth= -3.7 V) under negative bias illumination stress conditions. This improvement can be attributed to the reduced concentration of oxygen vacancy defects in the IZO channel layer during the O2 HPA treatment.

AB - This letter examines the effect of oxygen (O2) highpressure annealing (HPA) on indium zinc oxide (IZO) thinfilm transistors (TFTs) with a high-quality Al2O3 passivation layer. The IZO TFTs anneal under an O2 atmosphere at 9 atm exhibits a high field-effect mobility, low subthreshold gate swing, moderate threshold voltage (V th), and high ION/OFF ratio of 30.4 cm 2/Vs, 0.10 V/decade, 0.79 V, and 108, respectively. In addition, the O2 HPA-treated IZO TFT has superior reliability (δVth= -0.5 V) to that of the 0.2-atm-annealed device (δVth= -3.7 V) under negative bias illumination stress conditions. This improvement can be attributed to the reduced concentration of oxygen vacancy defects in the IZO channel layer during the O2 HPA treatment.

KW - High mobility

KW - indium zinc oxide semiconductor

KW - oxygen vacancy

KW - photo-bias stability

KW - thin-film transistors (TFTs)

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U2 - 10.1109/LED.2013.2259574

DO - 10.1109/LED.2013.2259574

M3 - Article

AN - SCOPUS:84880055115

SN - 0741-3106

VL - 34

SP - 894

EP - 896

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

M1 - 6522496

ER -

Improvement in photo-bias stability of high-mobility indium zinc oxide thin-film transistors by oxygen high-pressure annealing

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