@inproceedings{e2e9e1341c7a4641a717a5d48e1977fa,
title = "Implication of polarity dependence degradation on NMOSFET with polysilicon/Hf-silicate gate stack",
author = "Rino Choi and Lee, {B. H.} and Young, {C. D.} and Sim, {J. H.} and K. Mathews and G. Bersuker and P. Zeitzoff",
year = "2005",
language = "English",
isbn = "0780388038",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "636--637",
booktitle = "2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual",
note = "2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual ; Conference date: 17-04-2005 Through 21-04-2005",
}