Hot carrier reliability of n-MOSFET with ultra-thin HfO2 gate dielectric and poly-Si gate

Qiang Lu; Hideki Takeuchi; Ronald Lin; Tsu Jae King; Chenming Hu; Katsunori Onishi; Rino Choi; Chang Seok Kang; Jack C. Lee

Hot carrier reliability of n-MOSFET with ultra-thin HfO₂ gate dielectric and poly-Si gate

Qiang Lu, Hideki Takeuchi, Ronald Lin, Tsu Jae King, Chenming Hu, Katsunori Onishi, Rino Choi, Chang Seok Kang, Jack C. Lee

University of California at Berkeley

Research output: Contribution to journal › Conference article › peer-review

13 Scopus citations

Abstract

Hot carrier reliability of n-channel MOSFETs with 11 Å EOT HfO₂ gate dielectric and poly-Si gate was studied. Under peak I_SUB stress conditions, n-FETs with HfO₂ gate dielectric show longer lifetime when compared to SiO₂ n-FETs for the same stress substrate current. At room temperature, the 0.15 μm channel length HfO₂ n-FETs are projected to have 10-year lifetime at V_D = 2.76 V.

Original language	English
Pages (from-to)	429-430
Number of pages	2
Journal	Annual Proceedings - Reliability Physics (Symposium)
State	Published - 2002
Externally published	Yes
Event	Proceedings of the 2002 40th annual IEEE International Relaibility Physics Symposium Proceedings - Dallas, TX, United States Duration: 7 Apr 2002 → 11 Apr 2002

Keywords

Hafnium oxide
Hot carrier
Silicon nitride interface

Cite this

@article{4293d13b4b184cc5aaca30ef828d3ccb,

title = "Hot carrier reliability of n-MOSFET with ultra-thin HfO2 gate dielectric and poly-Si gate",

abstract = "Hot carrier reliability of n-channel MOSFETs with 11 {\AA} EOT HfO2 gate dielectric and poly-Si gate was studied. Under peak ISUB stress conditions, n-FETs with HfO2 gate dielectric show longer lifetime when compared to SiO2 n-FETs for the same stress substrate current. At room temperature, the 0.15 μm channel length HfO2 n-FETs are projected to have 10-year lifetime at VD = 2.76 V.",

keywords = "Hafnium oxide, Hot carrier, Silicon nitride interface",

author = "Qiang Lu and Hideki Takeuchi and Ronald Lin and King, {Tsu Jae} and Chenming Hu and Katsunori Onishi and Rino Choi and Kang, {Chang Seok} and Lee, {Jack C.}",

year = "2002",

language = "English",

pages = "429--430",

journal = "Annual Proceedings - Reliability Physics (Symposium)",

issn = "0099-9512",

note = "Proceedings of the 2002 40th annual IEEE International Relaibility Physics Symposium Proceedings ; Conference date: 07-04-2002 Through 11-04-2002",

}

TY - JOUR

T1 - Hot carrier reliability of n-MOSFET with ultra-thin HfO2 gate dielectric and poly-Si gate

AU - Lu, Qiang

AU - Takeuchi, Hideki

AU - Lin, Ronald

AU - King, Tsu Jae

AU - Hu, Chenming

AU - Onishi, Katsunori

AU - Choi, Rino

AU - Kang, Chang Seok

AU - Lee, Jack C.

PY - 2002

Y1 - 2002

N2 - Hot carrier reliability of n-channel MOSFETs with 11 Å EOT HfO2 gate dielectric and poly-Si gate was studied. Under peak ISUB stress conditions, n-FETs with HfO2 gate dielectric show longer lifetime when compared to SiO2 n-FETs for the same stress substrate current. At room temperature, the 0.15 μm channel length HfO2 n-FETs are projected to have 10-year lifetime at VD = 2.76 V.

AB - Hot carrier reliability of n-channel MOSFETs with 11 Å EOT HfO2 gate dielectric and poly-Si gate was studied. Under peak ISUB stress conditions, n-FETs with HfO2 gate dielectric show longer lifetime when compared to SiO2 n-FETs for the same stress substrate current. At room temperature, the 0.15 μm channel length HfO2 n-FETs are projected to have 10-year lifetime at VD = 2.76 V.

KW - Hafnium oxide

KW - Hot carrier

KW - Silicon nitride interface

UR - http://www.scopus.com/inward/record.url?scp=0036084779&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036084779

SN - 0099-9512

SP - 429

EP - 430

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

T2 - Proceedings of the 2002 40th annual IEEE International Relaibility Physics Symposium Proceedings

Y2 - 7 April 2002 through 11 April 2002

ER -

Hot carrier reliability of n-MOSFET with ultra-thin HfO₂ gate dielectric and poly-Si gate

Abstract

Keywords

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